H5ANAG8NCR-PBC - 16Gb DDR4 SDRAM DRAM | SK hynix
Teilenummer: H5ANAG8NCR-PBC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.6 | $116,00 |
| 100 | $10.8 | $1.080,00 |
| 500 | $10.1 | $5.050,00 |
| 1.000 | $9.5 | $9.500,00 |
H5ANAG8NCR-PBC Übersicht
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory. As a class of volatile memory ICs, DDR4 sits within the broader hierarchy of semiconductor memory: SDRAM, then DDR SDRAM generations (DDR, DDR2, DDR3, DDR4, DDR5). DDR4 transfers data on both clock edges, doubling effective bandwidth versus SDR memory, and adds bank groups, a lower 1.2 V operating voltage, and on-die termination compared with DDR3. Components like the H5ANAG8NCR-PBC are soldered onto memory modules (UDIMM, RDIMM, SO-DIMM) or directly onto motherboards as discrete down-memory in embedded designs.
Key features of this device include its 16Gb monolithic die density, x8 organization supporting standard DDR4 read/write burst operations, JEDEC-compliant DDR4 interface timing, and lead-free, halogen-free RoHS-compliant construction as stated in the SK hynix family datasheet. Bank-group architecture allows faster access to sequential data, improving effective bandwidth for streaming workloads.
Technically, the H5ANAG8NC family uses SK hynix CMOS DRAM process technology with internal bank groups, on-die termination (ODT), DLL for output timing control, and self-refresh for low-power data retention. The -PBC speed-grade suffix in SK hynix nomenclature identifies the speed bin and operating temperature range coding used across the H5ANAG8NC product family; exact speed-bin MHz and CL values should be confirmed against the current SK hynix datasheet before design-in.
Typical applications include server main memory, industrial embedded computing, networking equipment, and desktop/notebook PC memory modules where a stable DDR4 supply still matters in the DDR5 transition period.
A key design consideration is DDR4 signal integrity: fly-by command/address routing, VTTQ termination, and per-byte-lane length matching are required for reliable operation at full data rate.
This page synthesizes distributor sourcing data, drop-in alternatives from the same SK hynix 16Gb DDR4 family, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für H5ANAG8NCR-PBC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5ANAG8NCR-PBC (gleiche Bauform und Footprint) – abweichend in RoHS Status, Package, Density, Data Rate, Speed Grade.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5ANAG8NCJR-XNC
✅ Drop-In✓ Auf Lager
$65.625 / Stück
Datenblatt ansehen →H5ANAG8NCMR-VKC
✅ Drop-In✓ Auf Lager
$8.05 / Stück
Datenblatt ansehen →H5ANAG8NBJR-VKC
✅ Drop-In✓ Auf Lager
$8.6 / Stück
Datenblatt ansehen →H5ANAG8NAMR-UHC
✅ Drop-In✓ Auf Lager
$2.15 / Stück
Datenblatt ansehen →H5ANAG8NCR-XNC
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5ANAG8NBJR-PBC
✅ Drop-In✓ Auf Lager
$31.5 / Stück
Datenblatt ansehen →H5ANAG8NCR-PBC Technische Daten
| Memory Density | 16Gb (2 GB) |
| Speichertyp | DDR4 SDRAM |
| Speicherorganisation | x8 |
| Versorgungsspannung | 1.2 V (typical, DDR4 class) |
| Schnittstellentyp | Parallel, DDR4 (Double Data Rate 4) |
| Gehäuse | FBGA-78 (approximately 7.5 x 11 mm) |
| Montageart | Surface Mount |
| Bank Group Architecture | Yes (DDR4 bank groups) |
| On-Die Termination (ODT) | Yes (DDR4 standard feature) |
| Self-Refresh | Yes (DDR4 standard feature) |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free per SK hynix family datasheet) |
| Process Technology | CMOS |
| Application Class | Main memory (server, industrial, networking, PC) |
H5ANAG8NCR-PBC fbga-78 (approximately 7.5 x 11 mm) Pinbelegungsleitfaden
Pinbelegung für H5ANAG8NCR-PBC (fbga-78 (approximately 7.5 x 11 mm)-Gehäuse). Pin-Nummerierung, Funktionen und Anschlussdiagramme sind im Herstellerdatenblatt definiert. Entnehmen Sie diesem den genauen Footprint und Lötrichtlinien.
Keine detaillierten Pinbelegungsdaten verfügbar für H5ANAG8NCR-PBC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5ANAG8NCR-PBC ist geeignet für 6 Anwendungs: Server Main Memory, Industrial Embedded Computing, Networking Equipment, Desktop and Notebook PC Memory Modules, Gaming and Workstation Graphics Memory, Test and Measurement Instrumentation.
Server Main Memory
The H5ANAG8NCR-PBC fits server main-memory subsystems because 16Gb monolithic density doubles capacity per byte lane compared with 8Gb DDR4, and the DDR4 interface delivers the high bandwidth that virtualized and database workloads demand. In an ECC RDIMM or down-memory design, sixteen x8 components provide a 128-bit-wide ECC-protected channel; the x8 organization allows the controller to use the standard side-band or inline ECC algorithms directly. Bank-group architecture interleaves four groups to keep sequential streaming bandwidth high, and the 1.2 V VDD rail reduces memory power, which is often the second-largest power consumer after the CPU in dense servers. Designers should follow fly-by C/A routing and per-rank ODT tuning to meet eye masks at full data rate.
Empfohlen
Industrial Embedded Computing
Industrial PCs, edge controllers, and machine-vision systems use the H5ANAG8NCR-PBC as down-memory soldered directly on the CPU module, eliminating connector reliability issues of SO-DIMM sockets in vibration-prone environments. The 16Gb density supports large Linux images, frame buffers for vision pipelines, and local data logging without external storage round-trips. DDR4's 1.2 V operation cuts memory power versus DDR3 designs, simplifying passive cooling in sealed enclosures, while self-refresh preserves state across power-managed standby. Long-lifecycle industrial demand for DDR4 remains strong during the DDR5 transition, and the same-family speed variants (H5ANAG8NCJR-XNC, H5ANAG8NCMR-VKC) allow second-source substitutions within one PCB footprint.
Empfohlen
Networking Equipment
Routers, switches, and security appliances rely on the H5ANAG8NCR-PBC for packet-buffering tables, flow tables, and control-plane memory. The x8 DDR4 organization matches the byte-lane topology of network processors and communication SoCs, and the high effective bandwidth from bank-group interleaving keeps packet buffers serviced under line-rate traffic. 16Gb per component lets a compact appliance carry 4-8 GB of buffer memory with only a handful of FBGA-78 parts, conserving board area on dense line cards. Because network gear runs continuously, the low 1.2 V core supply reduces thermal load, and ODT settings should be tuned per network-processor reference design to maintain signal integrity across long fly-by topologies.
Empfohlen
Desktop and Notebook PC Memory Modules
The H5ANAG8NCR-PBC is used as a chip-down component on UDIMM, RDIMM, and SO-DIMM modules for desktop and notebook PCs. A 16Gb die enables 16 GB UDIMMs with only eight x8 components on a single-sided module, improving module density and thermal characteristics compared with double-stacked 8Gb layouts. JEDEC-compliant DDR4 timing allows direct use with Intel and AMD memory controllers; SPD firmware programs the -PBC speed bin into the module's serial-presence-detect EEPROM for automatic BIOS configuration. Module makers should verify die-revision-specific output driver and RTT settings against the SK hynix datasheet to pass DDR4 eye-mask compliance testing across temperature.
Empfohlen
Gaming and Workstation Graphics Memory
Discrete workstation graphics cards and high-bandwidth embedded GPU modules use the H5ANAG8NCR-PBC as 32-bit-wide GDDR companion memory where x8 DDR4 arrays feed frame buffers and compute scratchpads on cost-sensitive boards. Sixteen x8 components form a 128-bit bus delivering multi-gigabyte-per-second aggregate bandwidth via bank-group interleaving; the 1.2 V rail keeps board-level power within compact thermal envelopes. While GDDR offers higher per-pin rates, DDR4's lower cost and JEDEC interoperability make the H5ANAG8NCR-PBC attractive for professional visualization and AI-inference edge cards that prioritize capacity over peak bandwidth. Trace-length matching within 25 mils per byte lane is recommended to hold timing margin.
Empfohlen
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory to record long acquisition windows at high sample rates. The H5ANAG8NCR-PBC serves as acquisition buffer memory: its 16Gb density extends record length per component, and DDR4 bandwidth keeps pace with high-speed ADC streaming into round-robin or ping-pong buffer schemes. Instrument builders mount these components directly on acquisition boards beside FPGAs such as Intel/Altera Agilex-family devices, using the FPGA's hardened DDR4 memory controllers. Self-refresh retains waveform data during standby, and the RoHS-compliant lead-free, halogen-free construction meets environmental requirements of laboratory and regulatory-certified test equipment.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5ANAG8NCR-PBC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5ANAG8NCJR-XNC | H5ANAG8NCMR-VKC | H5ANAG8NBJR-VKC | H5ANAG8NAMR-UHC |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Memory Density | 16Gb | 16Gb | 16Gb | 16Gb | 16Gb |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Memory Generation | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Speed Grade Suffix | -PBC | -J, -XNC code | -M, -VKC code | -B, -VKC code | -A, -UHC code |
| Supply Voltage | 1.2 V (DDR4 class) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS / Halogen-Free | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- 16Gb monolithic density doubles capacity per component vs 8Gb DDR4 (vs. H5AN8G8NCJR-PBC)
- Higher available speed-bin headroom within the same footprint (vs. H5ANAG8NAMR-UHC)
- Trade-off: not the highest-speed suffix in the family (vs. H5ANAG8NCMR-VKC)
Designhinweise
DDR4 fly-by topology: route command/address/clock in fly-by from component to component with 40-ohm single-ended impedance and on-board VTT termination via a termination regulator. Match DQ to DQS# within the controller's specified skew window (typically a few picoseconds per byte lane) and keep stubs under trace-length budgets defined in the memory controller's layout guide. Run IBIS-AMI simulations at the -PBC data-rate bin before tape-out; DDR4 eye-mask compliance is the standard acceptance criterion.
Provide separate, low-impedance VDD (1.2 V core) and VDDQ (1.2 V I/O) power islands for the DRAM, with bulk capacitance plus high-frequency 0.1 uF ceramics placed within 2-3 mm of VDD/VDDQ ball pairs. Estimated: at 16Gb density with typical DDR4 activity, plan roughly 0.3-0.6 A per component on VDDQ depending on utilization and data rate (estimate, not a datasheet figure - confirm IDD specifications in the SK hynix datasheet for your speed bin). Decouple VTT with bulk capacitance sized to transient termination currents.
SK hynix reserves the right to change products or specifications without notice - always re-verify die revision (visible via speed-code suffix) and program the memory controller's driver-strength and RTT_nom/RTT_wr values per the datasheet of the exact suffix installed on the board. Mixing die revisions across ranks on the same channel is possible but requires controller-level leveling; prefer uniform suffixes per module. Confirm -PBC temperature coding against your ambient range before industrial design-in.
Compliance-Informationen
Per SK hynix datasheet documentation, the H5AN DDR4 SDRAM family is Lead-Free and Halogen-Free (RoHS Compliant). REACH and conflict-minerals declarations should be requested from SK hynix or your distributor.
