K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics
Teilenummer: K9DUGY8S7M ✓ Aktiv| Menge | Stückpreis | Gesamt |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9DUGY8S7M Übersicht
NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in series, enabling high bit density at low cost per gigabyte. Within the memory hierarchy, NAND flash sits below DRAM and above storage-class media: a NAND device -> non-volatile memory -> solid-state storage -> semiconductor memory IC. V-NAND stacks cell layers vertically rather than shrinking planar cells, improving endurance and reducing cell-to-cell interference compared with 2D NAND.
The K9DUG-series family is targeted at embedded and OEM storage designs where Samsung V-NAND density, block management by an external NAND controller, and industrial temperature handling are required. Devices in this family interface to host controllers through standard NAND signaling, with error correction handled at the system level (ECC engine in the controller), which is mandatory for modern 3D NAND due to higher raw bit error rates.
Typical applications include solid-state drives, eMMC/UFS-based embedded storage modules, set-top boxes, industrial gateways, automotive infotainment platforms, and network-attached storage appliances. In these systems the NAND die is paired with a controller such as those from Samsung's S4LK series or third-party NAND controllers.
Design considerations: modern V-NAND requires careful power-rail sequencing, on-die termination matching, and controller firmware that implements wear leveling, garbage collection, and read-retry algorithms. Always verify AC timing and temperature grades in the manufacturer datasheet for the full ordering-code suffix, as speed grades and bad-block behavior vary by suffix.
This page adds value beyond raw catalog listings by consolidating drop-in family alternatives from the same Samsung K9 family, practical design notes, application pairings, and sourcing guidance in one engineer-oriented reference, with all unverified parameters explicitly flagged rather than guessed.
Drop-in-Alternativen für K9DUGY8S7M – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K9DUGY8S7M (gleiche Bauform und Footprint) – abweichend in Memory Type, RoHS Status, Mounting Type, Package Type, Product Family.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K9DUGB8S7M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9PRGY8S7M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9PKGY8S7M-CCK0
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$9.4 / Stück
Datenblatt ansehen →K9HQGY8S5M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9DUGY8S7M Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Electronics |
| Speichertyp | NAND Flash (V-NAND, 3D) |
| Family | K9DUG-series NAND |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
K9DUGY8S7M standard Pinbelegungsleitfaden
Pinbelegung für K9DUGY8S7M (standard-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K9DUGY8S7M.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K9DUGY8S7M ist geeignet für 6 Anwendungs: Solid-State Drive Storage, Embedded eMMC/UFS Storage Modules, Industrial Gateways and Edge Computing, Set-Top Boxes and Smart TV Platforms, Automotive Infotainment Storage, Network Attached Storage Appliances.
Solid-State Drive Storage
Samsung K9-family V-NAND devices form the core storage medium of client and enterprise SSDs, where the K9DUGY8S7M's 3D V-NAND structure delivers high density per package and improved endurance over planar NAND. In an SSD, multiple NAND packages connect to a controller over toggle or ONFI interfaces, and the controller handles LDPC error correction, wear leveling, and garbage collection - mandatory functions for modern V-NAND because raw bit error rates exceed what planar-era ECC covered. The performance consideration is write amplification: V-NAND page/block organization determines how efficiently the controller coalesces writes, directly affecting sustained throughput and lifespan. Selecting a same-family suffix across sockets simplifies multi-channel designs.
Empfohlen
Embedded eMMC/UFS Storage Modules
Embedded storage modules such as eMMC and UFS combine Samsung V-NAND die or packages with a managed controller, and raw K9-family devices like the K9DUGY8S7M serve at the die/package level of such modules or in semi-managed designs. The V-NAND's vertical stacking allows module makers to reach 32 GB to 512 GB capacities in compact BGA footprints for smartphones, tablets, and IoT hubs. Key design considerations include power-rail sequencing between the NAND and controller, thermal dissipation within sealed enclosures, and firmware that respects the NAND's program/erase cycle rating. Using a single K9-family suffix across module revisions keeps the PCB footprint and reflow profile stable across supply cycles.
Empfohlen
Industrial Gateways and Edge Computing
Industrial edge gateways require non-volatile storage that survives wide temperature ranges and constant write churn from logging and OTA updates. Samsung K9-family V-NAND such as the K9DUGY8S7M fits this role when paired with an industrial-temperature controller, because V-NAND charge-trap cells tolerate program/erase stress better than planar floating-gate cells of equivalent generation. Designs typically use power-loss protection circuits (supercapacitor-backed rail holdup) so in-flight page programs complete during brownouts, preventing corrupt blocks. Verify the suffix's operating temperature grade in the Samsung datasheet, as commercial-grade suffixes should not be deployed in -40C to +85C enclosures without qualification data.
Empfohlen
Set-Top Boxes and Smart TV Platforms
Broadcast and streaming set-top boxes use K9-family V-NAND for firmware storage, catch-up TV caching, and DVR buffering, where the K9DUGY8S7M's high density per BGA package minimizes board area in cost-driven consumer hardware. The SoC's built-in NAND controller manages ECC and bad-block remapping, so the design effort centers on footprint selection, signal integrity on the high-speed NAND bus, and thermal design inside sealed plastic enclosures. Because consumer BOMs are price-sensitive, maintaining a same-footprint alternate suffix such as K9DUGB8S7M allows purchasing to switch on availability without a respin. Confirm toggle-mode timing compatibility with the SoC reference clock configuration during bring-up.
Empfohlen
Automotive Infotainment Storage
Automotive head units and digital clusters require reliable non-volatile media for maps, media, and logging; Samsung V-NAND packages like the K9DUGY8S7M can serve at the storage-die level of automotive-grade managed solutions. Automotive deployments demand wide operating temperature (-40C to +85C and beyond), AEC-qualified surrounding components, and firmware strategies for read disturb management under long static-map retention - V-NAND read-retry algorithms compensate for read-distinduced threshold shifts. Power interruption during ignition cycling requires capacitor-backed program completion or journaling file systems. Only suffixes qualified for the required temperature grade should be designed in; verify grade per the Samsung ordering-code table.
Empfohlen
Network Attached Storage Appliances
SMB and enterprise NAS appliances populate multiple K9-family V-NAND devices as caching or capacity tiers, where the K9DUGY8S7M provides dense raw NAND behind an SoC's NAND controller channels. Multi-channel designs benefit from using identical suffixes across channels to keep timing profiles uniform; interleaved channel operation hides page-program latency and lifts sequential write throughput. Key engineering concerns include the ECC strength demanded by V-NAND (LDPC in most modern controllers), thermal management in 1U chassis, and supply continuity - holding a same-footprint K9-family alternate such as K9PRGY8S7M on the approved vendor list mitigates NAND-market allocation cycles without PCB redesign.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K9DUGY8S7M – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K9DUGB8S7M | K9PRGY8S7M | K9PKGY8S7M-CCK0 | K9HQGY8S5M |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | 3D V-NAND flash | 3D V-NAND flash (same sub-series) | 3D V-NAND flash (different sub-series) | 3D V-NAND flash (different sub-series) | 3D V-NAND flash (different sub-series) |
| Drop-in Confidence | Reference part | High (same sub-series, 90%) | Medium (different sub-series, 80%) | Medium (different sub-series, 80%) | Medium-low (different grade suffix, 70%) |
Wichtigste Unterscheidungsmerkmale
- Same-sub-series continuity (vs. K9DUGB8S7M)
- Sub-series generation alignment (vs. K9PRGY8S7M)
- Samsung V-NAND vertical cell structure (vs. K9HQGY8S5M)
Designhinweise
Modern Samsung V-NAND devices use a single low-voltage supply rail and require clean, well-decoupled power. Place at least 100 nF ceramic decoupling per power ball plus bulk capacitance near each package, and implement controlled power-ramp sequencing per the Samsung datasheet power-up specification; powering the NAND before VCC ramp thresholds are met can leave internal latches in an undefined state. This is a general K9-family practice - confirm exact rail names, sequencing order, and ramp rates in the official datasheet for this suffix.
NAND toggle/ONFI interfaces at modern V-NAND speeds are source-synchronous; match trace lengths within the datasheet skew budget between each data strobe and its data group, and route as 50-ohm single-ended references with solid ground planes. In multi-package BGA topologies, keep stubs minimal and consider on-die termination settings in the controller. Verify the suffix's maximum timing mode and derate for your stack-up before closing the layout; exceeding the validated timing mode is the most common cause of marginal NAND read errors in the field.
Never swap NAND suffixes without updating the controller firmware profile: different K9 suffixes can carry different page sizes, block counts, timing modes, and read-retry tables, and booting with a mismatched parameter page causes silent data corruption rather than clean failures. Additionally, NAND ordering codes encode speed/temperature grade - a commercial-grade suffix must not be qualified for an automotive or extended-temperature socket without formal data. Always decode the full ordering code against the Samsung datasheet table and re-run burn-in when changing suffixes.
Samsung BGA NAND packages require standard lead-free reflow profiles; follow the package MSL rating from the datasheet label and bake per JEDEC guidance if the floor-life is exceeded. Provide adequate via-in-pad or dog-bone fanout on the ball array and connect the thermal/ground balls to a solid plane. Because raw NAND is sensitive to reflow-induced stress, avoid multiple reflow cycles on the same unit and inspect solder joints with X-ray on first-article builds for high-reliability programs.
Compliance-Informationen
RoHS/lead-free per Samsung standard environmental policy for active semiconductor products; formal REACH, halogen-free, and conflict-minerals declarations were not present in the retrieved data and should be confirmed via Samsung material declarations.
