2N7002L vs BSS123NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil 2N7002L dari onsemi dan BSS123NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 2N7002L BSS123NH6327XTSA1
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 115 mA (Ta) 190 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: typical and max VGS(th)]
Power Dissipation (PD) 200 mW (Ta), 225 mW max 500 mW (Ta)
Technology High cell density trench MOSFET —
Tipe Mounting Surface Mount Surface Mount
Paket SOT-23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi Infineon Technologies
Status RoHS [DATA_NEEDED: RoHS status] —
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
Rentang Suhu Kerja — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
Level MSL — 1 (per JEDEC J-STD-020)

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