2N7002L vs BSS123NH6327XTSA1 比較
詳細並排比較 2N7002L 由 onsemi 與 BSS123NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2N7002L | BSS123NH6327XTSA1 |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 115 mA (Ta) | 190 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: typical and max VGS(th)] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | 500 mW (Ta) |
| Technology | High cell density trench MOSFET | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | SOT-23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | Infineon Technologies |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| 工作溫度範圍 | — | -55 °C to +150 °C (junction) |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |