5CSEBA4U19I7 vs 5CSEBA4U19A7N Comparación
Comparación detallada lado a lado de 5CSEBA4U19I7 por Intel y 5CSEBA4U19A7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
5CSEBA4U19I7 - Cyclone V SE SoC FPGA, 40K LE, Dual-A9, 484-UBGA | Intel / Altera
5CSEBA4U19I7 ✓ ActivoComparación de especificaciones
| Parámetro | 5CSEBA4U19I7 | 5CSEBA4U19A7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $24,95 | $99,90 |
| Device Family | Cyclone V SE SoC FPGA | — |
| Logic Elements | 40 K | 40 K |
| Process Technology | 28 nm TSMC low-power | — |
| Core Voltage | 1.1 V | 1.1 V (typical) |
| HPS Core | Dual-core ARM Cortex-A9 MPCore with CoreSight, NEON | — |
| HPS Maximum Frequency | 800 MHz | — |
| FPGA Maximum Frequency | 400 MHz | — |
| DSP Blocks | 156 (18x18 multipliers) | — |
| Embedded Memory | M10K blocks | 3.4 Mbits (M9K) |
| Encapsulado | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch | 484-UBGA (U19), 19x19 mm, 1.0 mm pitch |
| Temperatura de funcionamiento | -40C to +100C (industrial, I7 grade) | — |
| HPS Peripherals | EMAC, USB 2.0, SD/MMC, NAND, SPI, I2C, UART, I2S | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount (BGA) |
| Nivel MSL | [DATA_NEEDED: MSL level] | 3 (168 hours) |
| Estado RoHS | Compliant | Compliant |
| Family | — | Cyclone V SE SoC FPGA |
| Hard Processor System | — | Dual ARM Cortex-A9 MPCore with CoreSight |
| Adaptive Logic Modules | — | [DATA_NEEDED: ALM count] |
| DSP Blocks (18x18 Multipliers) | — | 224 |
| PLLs | — | [DATA_NEEDED: PLL count] |
| HPS Maximum Application Clock | — | 925 MHz |
| Memory Interfaces | — | DDR3, DDR3L, LPDDR2 (via HPS); soft DDR3/2 in FPGA |
| User I/O | — | 161 |
| Temperatura de unión de funcionamiento | — | -40C to +125C (automotive) / -40C to +100C (industrial) |
| Process Node | — | TSMC 28 nm low-power |