K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung
부품 번호: K9EUGY8S0M-CCK0 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9EUGY8S0M-CCK0 개요
NAND flash is a non-volatile memory category within the broader memory-IC hierarchy (NAND flash -> solid-state storage memory -> semiconductor memory). Unlike NOR flash, NAND cells are connected in series, enabling higher density and faster program/erase throughput at the cost of random-access speed. Raw NAND requires a host controller that manages page programming, block erasure, bad-block management, wear leveling, and ECC (LDPC in modern controllers) per the ONFI-style toggle DDR interface timing used by Samsung V-NAND.
Key characteristics of this device family include a toggle-mode DDR interface for high-bandwidth data transfer, TLC (triple-level cell) storage providing 3 bits per cell for maximum density, and multi-die stacked organization inside a single package to reach 256 Gb of usable capacity. The CCK0 suffix denotes Samsung's standard commercial-grade processing and packaging option; the sibling BCK0 variant in the same family differs by package processing/temperature option, and both are commonly designed into SSD and embedded storage BOMs.
The vertical gate stack of 128-layer V-NAND reduces cell-to-cell interference compared with planar TLC at equivalent density, improving endurance and retention margins. Program and erase operations are command-driven through the controller with ready/busy handshaking, and the device supports internal multi-plane operation for parallelism during program, erase, and read operations.
Typical applications include client SSDs, embedded USB flash drives, memory cards, industrial storage modules, set-top boxes, and any storage subsystem where a controller-managed raw NAND die stream is required. The 256 Gb TLC density makes it attractive for 128 GB to 512 GB consumer storage tiers.
Design considerations: raw NAND must not be connected directly to a general-purpose bus - a dedicated NAND controller with LDPC/ECC engine, valid power-fail sequencing, and appropriate VCC/VCCQ decoupling is mandatory. Verify the exact package dimensions, ball map, interface voltage, and timing specifications against the official Samsung datasheet before layout.
This page synthesizes verified distributor listings, same-family cross-reference options, and practical sourcing guidance not consolidated in the manufacturer documentation.
드롭인 대체품: K9EUGY8S0M-CCK0 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K9EUGY8S0M-CCK0 (동일 폼 팩터 및 풋프린트) — 차이점: Memory Type, Product Family, Mounting Type, Product Type, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K9EUGY8S0M-BCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9DUGY8S0M-CCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9DUGY8S0M-BCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9CHGY8S5C-CCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9HQGY8S5M
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9PRGY8S7M-CCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9EUGY8S0M-CCK0 최대 정격 & 전기적 특성
| Manufacturer | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory |
| Cell Type | TLC (3 bits per cell) |
| Grade Suffix | CCK0 (standard commercial grade) |
| 실장 유형 | Surface Mount (BGA) |
K9EUGY8S0M-CCK0 standard 핀 구성 가이드
K9EUGY8S0M-CCK0(standard 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K9EUGY8S0M-CCK0.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K9EUGY8S0M-CCK0 적합 용도: 6 애플리케이션s: Client SSD Storage, Embedded USB Flash Drives, Memory Cards, Industrial Storage Modules, Set-Top Box and Smart TV Storage, Networking and Router Storage.
Client SSD Storage
The K9EUGY8S0M-CCK0 fits client SSD designs where 256 Gb-class TLC V-NAND provides the best balance of density, endurance, and per-bit cost for mainstream consumer capacity points. Placed behind an SSD controller with an LDPC ECC engine, the TLC cells deliver multi-terabyte DWPD-class endurance appropriate for boot and general-purpose drives. Its toggle-mode interface sustains the sequential bandwidth that PCIe and SATA controllers expect, and multi-plane operation parallelizes program and erase to keep queue depths serviced. Designers should verify the controller's supported NAND profile list includes this Samsung generation before board bring-up.
추천
Embedded USB Flash Drives
USB flash controller vendors pair K9EUGY8S0M-CCK0-class TLC V-NAND with single-chip USB 3.x controllers to build 32 GB-per-die-tier flash drives. The 256 Gb density keeps the BOM to one or two packages for mainstream capacities, cutting cost and PCB area versus lower-density planar NAND. Because USB controllers handle ECC, wear leveling, and bad-block management internally, the raw V-NAND drops into a reference design with minimal firmware change - provided the controller firmware image supports this Samsung generation's toggle timing. Thermal design should confirm the FBGA stays within datasheet limits under sustained sequential write loads.
추천
Memory Cards
SD and microSD card manufacturers use K9EUGY8S0M-CCK0-class 256 Gb TLC V-NAND inside molded card assemblies, where package height and power draw are tightly constrained. V-NAND's vertical stack delivers high capacity in a small footprint, and TLC density keeps per-card BOM cost competitive in consumer price tiers. The card controller manages program/erase cycling and LDPC decoding, so the NAND must appear on the controller's qualified list. Designers should validate that read current stays within the card's power budget on mobile hosts, and confirm grade-suffix definitions cover the consumer temperature envelope for the target card class.
추천
Industrial Storage Modules
In industrial storage - rugged SSDs, logging recorders, and embedded modules - K9EUGY8S0M-CCK0 serves as the storage element behind an industrial controller with enhanced ECC and power-fail protection. TLC V-NAND suits read-mostly and moderate-write industrial workloads; write-heavy logging should employ SLC-cache firmware or pSLC mode where the controller supports it. Verify the CCK0 grade's operating temperature range against the module spec, and design power-fail circuitry so in-flight program operations do not corrupt data. Industrial customers typically require vendor-managed change notification, so confirm Samsung lifecycle status before design-in.
추천
Set-Top Box and Smart TV Storage
Set-top boxes and smart TVs store firmware, channel databases, and DVR buffers on K9EUGY8S0M-CCK0-class raw TLC V-NAND connected to an SoC's integrated NAND controller. The 256 Gb density covers typical 8-32 GB eMMC-class capacity requirements with a single stacked package, and TLC cost meets consumer BOM targets. SoC boot ROMs usually require a specific toggle-mode profile, so confirm the SoC's supported Samsung NAND list. Because these products run continuous background recording, wear-leveling configuration and TV-logging write amplification should be tuned to keep TLC endurance within the 3-5 year product lifetime.
추천
Networking and Router Storage
Enterprise Wi-Fi routers, mesh nodes, and NVR gateways use K9EUGY8S0M-CCK0-class V-NAND for firmware image storage, container filesystems, and local video buffering. The TLC density enables feature-rich firmware images plus persistent journals without a separate NOR boot device in many designs (boot code typically remains in NOR/SPINOR, with rootfs on this NAND). Raw NAND requires the SoC's NAND controller to implement ECC and bad-block handling at boot; verify the bootloader chain supports this Samsung generation. Consider temperature derating for passive-cooled network equipment enclosures, since sustained DVR writes heat the FBGA above ambient.
추천
추천 제품 요약
엔지니어링 참조 데이터: K9EUGY8S0M-CCK0 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K9EUGY8S0M-BCK0 | K9DUGY8S0M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|---|---|
| Package | FBGA (Samsung V-NAND molded BGA) | FBGA - same family package | FBGA - same family package | FBGA - same family package |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| Grade Suffix | CCK0 | BCK0 | CCK0 | CCK0 |
| Controller Firmware Requirement | Samsung NAND profile in controller support list | Same profile requirement | K9DU profile | K9CH profile |
| Primary Use Case | SSD / USB / embedded storage | SSD / USB / embedded storage | Cost-optimized storage builds | Alternate density tiers |
주요 차별점
- Latest same-die family sourcing option (vs K9DUGY8S0M-CCK0)
- Dual-sourcing within identical silicon (vs K9EUGY8S0M-BCK0)
- CCK0 grade consistency (vs K9CHGY8S5C-CCK0)
설계 노트
Never connect K9EUGY8S0M-CCK0 directly to a general-purpose bus. As raw TLC V-NAND, it requires a dedicated controller or SoC NAND engine providing LDPC/ECC, bad-block management, wear leveling, and correct toggle-mode timing. Using a controller firmware that does not list this Samsung generation in its supported NAND profile table will cause boot failures or silent data corruption. Always validate with the controller vendor's qualification suite before mass production.
NAND devices in this family use separate core and I/O supplies (VCC and VCCQ) with defined power-up sequencing in the Samsung datasheet. Because the exact voltage values for this MPN are NDA datasheet items, do not copy rail voltages from older-generation schematics - obtain the K9EUGY8S0M datasheet and confirm. Add bulk plus 0.1uF decoupling at each supply ball group and ensure power-fail protection holds program-in-progress operations within the datasheet's tVCC_rise/fall constraints.
For FBGA NAND, fan out signal balls with length-matched, daisy-chained routing to the controller, keeping the DQ/RE/WP command group stub-free and within the interface's flight-time budget. Use a solid ground reference plane directly under the NAND-to-controller nets, and place series termination per the reference design in the controller vendor's layout guide. High-layer-count V-NAND draws higher peak current during program operations than planar NAND, so verify plane copper and via stitching for the return path.
규정 준수 정보
Compliance status for this MPN was not stated in the retrieved web data. Samsung consumer NAND is typically RoHS-compliant, but per data authenticity policy the status must be confirmed from Samsung's official environmental documentation rather than assumed.
