K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics
N.º de pieza: K9UMGB8U7M ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9UMGB8U7M Descripción general
NAND flash memory is a type of non-volatile storage technology that retains data without power and is organized into pages and blocks that are erased and programmed in units. Within the memory hierarchy, NAND flash sits below volatile DRAM in speed but offers far higher density and lower cost per bit, making it the dominant technology for solid-state storage, eMMC modules, SSDs, and raw managed-NAND solutions. Samsung is one of the world's largest NAND flash manufacturers, and the K9 family has historically defined industry-standard raw NAND interfaces such as asynchronous ONFI-compatible timing.
Key differentiators of Samsung K9-series NAND typically include a x8-bit data interface, single-level or multi-level cell technology depending on the generation, low power consumption in active and standby modes, and copy-back program operations that reduce host-side data manipulation. Devices in this family are controlled through standard command latching cycles on CLE, ALE, WE, RE, and CE signals.
Typical applications include set-top boxes, digital television firmware storage, industrial embedded controllers, networking equipment boot storage, and consumer electronics requiring reliable non-volatile mass storage.
A critical design consideration with raw NAND is the requirement for external error-correction code (ECC) management, wear-leveling, and bad-block management in the host controller, since the memory device does not perform these functions internally.
This page synthesizes drop-in alternatives from the same Samsung K9 family, design considerations, and sourcing guidance not consolidated in the manufacturer datasheet alone.
Alternativas directas para K9UMGB8U7M — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K9UMGB8U7M (mismo factor de forma y huella) — difiere en Memory Type, Organization, Package, Density, Interface.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K9QDGB8U7M
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
Consulte el precio
Ver hoja de datos →K9PDG08U5M
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$4.2 / unidad
Ver hoja de datos →K9MDG08U5M
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$35.5 / unidad
Ver hoja de datos →K9LCG08U1M
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$11.85 / unidad
Ver hoja de datos →K9HCG08U1M
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
Consulte el precio
Ver hoja de datos →K9UMGB8U7M Valores máximos y características eléctricas
| Tipo de memoria | NAND Flash |
| Manufacturer | Samsung Electronics |
| Family | K9U series NAND Flash |
Guía de configuración de pines de K9UMGB8U7M standard
Configuración de pines para K9UMGB8U7M (encapsulado standard). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K9UMGB8U7M.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K9UMGB8U7M es adecuado para 6 aplicacións: Set-Top Box and Digital TV Firmware Storage, Industrial Embedded Controllers, Networking Equipment Boot Storage, Consumer Electronics Mass Storage, Solid-State Drive and Storage Module Design, Smart Home and IoT Hub Storage.
Set-Top Box and Digital TV Firmware Storage
The K9UMGB8U7M fits set-top box and digital television designs that must store firmware, channel databases, and application images in non-volatile memory. Samsung K9-family NAND provides the standard asynchronous x8 command interface that mainstream STB SoCs boot from directly, and its page/block organization supports efficient in-field firmware updates with copy-back operations. Placed on the boot bus with the host's NAND controller handling ECC and bad-block management, the device delivers high-density storage at low cost per bit. Design consideration: verify the controller ECC strength matches the NAND generation's requirement, and reserve replacement blocks in the partition map for long-term reliability across thousands of program/erase cycles in fleet deployments.
Recomendado
Industrial Embedded Controllers
Industrial PLCs, HMIs, and embedded controllers use the K9UMGB8U7M as low-cost non-volatile storage for application code, configuration data, and logging. Samsung K9-family NAND withstands the program/erase workload of periodic log writes when paired with a wear-leveling file system, and its standard interface integrates with common industrial SoCs. The part's non-volatile nature ensures configuration survives power loss, which is essential in factory automation. Design consideration: industrial environments see wide temperature swings and brown-outs, so enable write-protect during power-fail events and validate data retention over the full operating temperature using the reliability tables in the Samsung datasheet before deployment.
Recomendado
Networking Equipment Boot Storage
Routers, switches, and access points store bootloader and OS images in raw NAND such as the K9UMGB8U7M. The standard asynchronous NAND command interface supported by Samsung's K9 family works directly with the boot ROMs of common networking SoCs, while the device's page organization allows redundant image slots (A/B partitions) for fail-safe firmware upgrades. With the host implementing ECC and bad-block skipping, the NAND provides gigabit-class hardware with reliable field-updatable storage at minimal BOM cost. Design consideration: dual-image schemes should each fit within independently erased block groups so a failed update never corrupts both slots, and write-protect should gate the primary bootloader region.
Recomendado
Consumer Electronics Mass Storage
Consumer products such as smart speakers, toys, appliances, and small displays use the K9UMGB8U7M to store media assets, voice models, and application data at the lowest cost per gigabyte. Samsung's K9-family NAND integrates with low-cost MCU host platforms, and its asynchronous interface requires no high-speed PHY design. Copy-back program operations reduce host CPU load when relocating data during garbage collection. Design consideration: consumer products typically see infrequent writes, so endurance is rarely the limiting factor - but cost-driven designs should size the partition table conservatively and include spare blocks, since consumer field conditions (power interruptions, heat buildup in enclosed housings) accelerate bad-block growth over product lifetime.
Recomendado
Solid-State Drive and Storage Module Design
The K9UMGB8U7M can serve as a raw NAND component in SSD controllers and storage module designs, where multiple K9-family devices are combined under a dedicated NAND controller. Samsung K9 NAND's page/block architecture supports parallel channel architectures, and standard command timing simplifies controller firmware across device generations. In SSD applications, the controller performs aggressive ECC (BCH or LDPC), wear-leveling, and garbage collection that raw NAND requires. Design consideration: interleave multiple NAND dies across channels to hide program/erase latencies, and match the controller's supported ONFI timing modes to the Samsung datasheet specifications to avoid marginal read windows at maximum clock rates.
Recomendado
Smart Home and IoT Hub Storage
Smart home hubs, security gateways, and IoT edge devices use the K9UMGB8U7M to persist device provisioning data, firmware, and event buffers. Samsung K9-family NAND pairs well with mid-range IoT SoCs whose boot ROMs support the standard asynchronous NAND interface, and the device's non-volatile storage keeps security keys and network credentials intact through power cycles. Because IoT devices may write frequent sensor logs, the host's wear-leveling algorithm and the NAND's endurance rating jointly determine product lifetime. Design consideration: buffer log writes in RAM and commit in full pages to minimize program cycles, and reserve at least the datasheet-recommended spare-block ratio for long-term reliability in always-on deployments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K9UMGB8U7M — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K9QDGB8U7M | K9PDG08U5M | K9MDG08U5M |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Product Family | K9U series NAND Flash | K9U series NAND Flash | K9P series NAND Flash | K9M series NAND Flash |
| External ECC Required | Yes (raw NAND) | Yes (raw NAND) | Yes (raw NAND) | Yes (raw NAND) |
Diferenciadores clave
- Latest-generation K9U family naming (frente a K9HCG08U1M)
- Identical suffix structure to K9QDGB8U7M (frente a K9QDGB8U7M)
- Raw NAND cost structure (frente a K9PDG08U5M)
Notas de diseño
Raw NAND such as the K9UMGB8U7M does not perform error correction internally. The host controller must implement the ECC strength specified for this NAND generation in the Samsung datasheet - under-specified ECC is the single most common cause of field data corruption in raw-NAND designs. Additionally, implement bad-block management from the factory-marked bad-block table and re-evaluate blocks after every erase cycle. Never assume a block is good simply because it passed at production test.
Decouple the NAND VCC rail with at least a 0.1uF ceramic capacitor placed within 5 mm of the device power pin, plus bulk capacitance near the board entry point. Program and erase operations draw short current bursts that can droop a weak supply rail and cause program failures. If the shared rail serves other peripherals, ensure the worst-case simultaneous programming current (per datasheet ICC values) is budgeted in the power supply design.
Keep the NAND control lines (CLE, ALE, WE, RE, CE, R/B) as a routed group with matched lengths where practical, and avoid routing them adjacent to switching regulator nodes that can capacitively couple glitches onto WE or RE. Enable the write-protect pin during power-up and power-down sequencing to prevent spurious program commands while VCC is unstable. For high-vibration products, confirm the package solder-joint reliability per the Samsung package reliability report.
Información de cumplimiento
Compliance status for the exact K9UMGB8U7M suffix was not found in the retrieved web data. Obtain the compliance certificate from Samsung's environmental documentation portal or your distributor.
