NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
N.º de pieza: NT5AD512M16A4-HR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.7 | $12,70 |
| 10 | $11.5 | $115,00 |
| 100 | $10.3 | $1.030,00 |
| 500 | $9.2 | $4.600,00 |
| 1.000 | $8.1 | $8.100,00 |
NT5AD512M16A4-HR Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory technology, succeeding DDR3. It achieves higher bandwidth and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a type of volatile memory that requires continuous power to retain data, and it is a key component in the memory hierarchy of modern computing systems, from servers to embedded controllers.
Key features of the NT5AD512M16A4-HR include auto self-refresh, a built-in temperature sensor for thermal management, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, data mask, write leveling, and ZQ calibration. These features enhance signal integrity and reliability in high-speed systems. The device supports a temperature range of 0°C to +95°C, covering commercial and industrial operating conditions.
Technically, the NT5AD512M16A4-HR utilizes a 16n prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per device at 3200 Mbps. The built-in temperature sensor enables adaptive refresh rates, reducing power consumption in idle states. The CRC function detects and corrects data transmission errors, which is critical for long-duration, high-reliability applications.
Typical applications include servers, data centers, networking equipment, industrial PCs, and high-performance embedded systems. The 512M x 16 organization is ideal for memory modules and systems requiring high density with a moderate bus width, such as DDR4 UDIMMs and SODIMMs.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the JEDEC DDR4 layout guidelines for signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternativas directas para NT5AD512M16A4-HR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5AD512M16A4-HR (mismo factor de forma y huella) — difiere en Package, Data Rate, Density, Operating Temperature Range, Operating Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →NT5AD512M16A4-HR Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Organización de memoria | 512M x 16 |
| Density | 8 Gb |
| Tensión de alimentación | 1.2 V |
| Velocidad de datos | 3200 Mbps (PC4-25600) |
| Temperatura de funcionamiento | 0°C to +95°C |
| Encapsulado | TFBGA-96 |
| Tipo de montaje | Surface Mount |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
Configuración de pines de NT5AD512M16A4-HR
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | A0 — Address input 0 |
| Pin E2 | A1 — Address input 1 |
| Pin E3 | A2 — Address input 2 |
| Pin F1 | BA0 — Bank address 0 |
| Pin F2 | BA1 — Bank address 1 |
| Pin F3 | BG0 — Bank group 0 |
| Pin G1 | CK — Clock |
| Pin G2 | CK# — Complementary clock |
| Pin G3 | CKE — Clock enable |
| Pin H1 | CS# — Chip select |
| Pin H2 | RAS# — Row address strobe |
| Pin H3 | CAS# — Column address strobe |
| Pin J1 | WE# — Write enable |
| Pin J2 | ODT — On-die termination |
| Pin J3 | RESET# — Asynchronous reset |
| Pin K1 | ZQ — Calibration reference |
| Pin K2 | VDD — Power supply |
| Pin K3 | VSS — Ground |
Aplicaciones típicas
NT5AD512M16A4-HR es adecuado para 6 aplicacións: Server Memory, Networking Equipment, Industrial PCs, Embedded Systems, Data Center Storage, Telecommunications.
Server Memory
The NT5AD512M16A4-HR provides 8Gb density and 3200 Mbps data rate, ideal for server DIMMs requiring high bandwidth and capacity. Its 1.2V operation reduces power consumption in data centers, and the CRC function ensures data integrity in long-duration operations. The 512M x 16 organization supports standard UDIMM and RDIMM configurations, enabling scalable memory capacity for cloud computing and virtualization workloads.
Recomendado
Networking Equipment
In routers and switches, the NT5AD512M16A4-HR offers high-speed data buffering with 3200 Mbps throughput. The built-in temperature sensor enables adaptive refresh, maintaining performance in thermally constrained environments. Its 8Gb density supports large routing tables and packet buffers, while the 1.2V supply minimizes power dissipation in 24/7 operation. The TFBGA-96 package fits compact line card designs.
Recomendado
Industrial PCs
The NT5AD512M16A4-HR operates from 0°C to +95°C, covering industrial temperature requirements. Its auto self-refresh and CRC features ensure reliable operation in factory automation and process control systems. The 512M x 16 organization supports compact industrial motherboards, while the 1.2V supply reduces heat generation in sealed enclosures. The TFBGA-96 package withstands vibration in harsh environments.
Recomendado
Embedded Systems
For high-performance embedded applications like vision systems and edge computing, the NT5AD512M16A4-HR provides 8Gb capacity and 3200 Mbps bandwidth. The write leveling and ZQ calibration features simplify PCB design, while the built-in temperature sensor enables thermal management in compact enclosures. Its 1.2V operation is compatible with modern SoCs, and the TFBGA-96 package supports dense layouts.
Recomendado
Data Center Storage
In storage controllers and NVMe SSDs, the NT5AD512M16A4-HR offers high-speed caching with 3200 Mbps data rate. The CRC function ensures data integrity in storage applications, while the 1.2V supply reduces power consumption in large arrays. Its 8Gb density supports large cache buffers, and the auto self-refresh minimizes idle power. The TFBGA-96 package fits standard controller board layouts.
Recomendado
Telecommunications
The NT5AD512M16A4-HR supports high-bandwidth data processing in base stations and telecom equipment. Its 3200 Mbps data rate handles high-throughput packet processing, while the built-in temperature sensor enables operation in outdoor enclosures. The 1.2V supply reduces power in remote installations, and the CRC function ensures reliable data transmission. The TFBGA-96 package is suitable for compact line cards.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5AD512M16A4-HR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5AD512M16C4-HR | K4A8G165WC-BCRC | MT40A512M16JY-075E |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Nanya | Nanya | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CRC Function | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Built-in temperature sensor (frente a K4A8G165WC-BCRC)
- CRC function (frente a MT40A512M16JY-075E)
- Industrial temperature grade (frente a NT5AD512M16C4-JRI)
Notas de diseño
Place 0.1uF and 1uF decoupling capacitors close to each VDD and VDDQ pin. Use a solid ground plane and follow JEDEC DDR4 layout guidelines for signal integrity. Keep trace lengths matched for DQ and address/command signals to minimize skew.
The NT5AD512M16A4-HR operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The built-in temperature sensor can be used to monitor die temperature and adjust refresh rates, reducing power and heat in idle states.
Connect a 240-ohm resistor from the ZQ pin to ground for calibration. Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. Follow the write leveling procedure to ensure proper timing between DQS and CK.
Información de cumplimiento
RoHS compliant per Nanya product page. Not AEC-Q100 qualified - use NT5AD512M16A4 for automotive.
