NT5CB256M16CP-DII - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º de pieza: NT5CB256M16CP-DII ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $9.5455 | $9,55 |
| 10 | $6.8939 | $68,94 |
| 100 | $6.0985 | $609,85 |
| 500 | $5.8333 | $2.916,65 |
| 1.000 | $5.5682 | $5.568,20 |
NT5CB256M16CP-DII Descripción general
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is widely used in computing, networking, and embedded systems where energy efficiency is critical. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each offering increased bandwidth and lower power.
Key features include a 16-bit data bus, 8 internal banks, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT), and programmable CAS latency. The device supports auto-refresh and self-refresh modes, with a refresh interval of 7.8us at 85C and 3.9us at 95C. It also features a temperature-compensated self-refresh (TCSR) for improved reliability in high-temperature environments.
The NT5CB256M16CP-DII utilizes Nanya's advanced C-die process technology, enabling high density and low power. The memory operates from a 1.35V core supply and a 1.5V I/O supply (for DDR3L, VDDQ is 1.35V). It supports data transfer rates up to 1600 Mbps per pin, providing a peak bandwidth of 3.2 GB/s per device. The device includes a programmable mode register for configuring CAS latency, burst length, and other operating parameters.
Typical applications include embedded computing, networking equipment (routers, switches), industrial automation, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs, while the industrial temperature range (-40C to +95C) ensures reliable operation in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a separate VDDQ supply; both must be within specified tolerances.
Alternativas directas para NT5CB256M16CP-DII — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5CB256M16CP-DII (mismo factor de forma y huella) — difiere en Data Rate, Package, Density, Burst Length, CAS Latency (CL).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
NT5CC256M16CP-DII
✓ En stock
$2.3 / unidad
Ver hoja de datos →MT41K256M16TW-107
✓ En stock
$14.1 / unidad
Ver hoja de datos →K4B4G1646E-BYMA
✓ En stock
$14.3182 / unidad
Ver hoja de datos →NT5CB256M16CP-DIA
📋 Alternativa de referencia (no en el catálogo)
NT5CB256M16DP-DI
📋 Alternativa de referencia (no en el catálogo)
IS43TR16512B-125KBLI
📋 Alternativa de referencia (no en el catálogo)
NT5CB256M16CP-DII Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Density | 4Gb |
| Organización de memoria | 256M x 16 |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) |
| I/O Voltage (VDDQ) | 1.35V (1.283V to 1.45V) |
| Velocidad de datos | DDR3L-1600 (PC3L-12800) |
| Latencia CAS | CL11 |
| tCK (min) | 1.25 ns |
| Number of Banks | 8 |
| Burst Length | 8, 4 (with burst chop) |
| Interfaz | SSTL-15 |
| Encapsulado | 96-ball FBGA (9mm x 13mm) |
| Rango de temperatura de funcionamiento | -40C to +95C (industrial) |
| Refresh Interval | 7.8us at 85C, 3.9us at 95C |
| RoHS | Compliant |
Configuración de pines de NT5CB256M16CP-DII
| Pin A0-A15 | Address Inputs — Row/column address inputs |
| Pin BA0-BA2 | Bank Address Inputs — Select bank for read/write |
| Pin DQ0-DQ15 | Data Input/Output — 16-bit bidirectional data bus |
| Pin RAS# | Row Address Strobe — Latches row address |
| Pin CAS# | Column Address Strobe — Latches column address |
| Pin WE# | Write Enable — Enables write operation |
| Pin CS# | Chip Select — Enables the device |
| Pin CKE | Clock Enable — Enables clock and self-refresh |
| Pin ODT | On-Die Termination — Controls internal termination |
| Pin CK, CK# | Differential Clock — System clock inputs |
| Pin VDD | Core Power Supply — 1.35V supply |
| Pin VDDQ | I/O Power Supply — 1.35V supply for I/O |
| Pin VSS | Ground — Ground |
Aplicaciones típicas
NT5CB256M16CP-DII es adecuado para 6 aplicacións: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Medical Devices, Test & Measurement.
Embedded Computing
The NT5CB256M16CP-DII provides high-density, low-power memory for embedded processors and SoCs. Its 4Gb capacity and 16-bit interface suit applications like industrial PCs, single-board computers, and IoT gateways. The 1.35V operation reduces power consumption, extending battery life in portable devices. With DDR3L-1600 speed, it delivers sufficient bandwidth for multitasking and data-intensive workloads. The industrial temperature range ensures reliable operation in harsh environments, making it ideal for factory automation and outdoor computing.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the NT5CB256M16CP-DII offers the capacity and speed needed for packet buffering and routing tables. Its low voltage helps manage thermal budgets in dense chassis. The 16-bit data bus simplifies PCB routing, and the FBGA package saves board space. The device's reliability and industrial temperature rating make it suitable for 24/7 operation in telecom and data center environments. DDR3L-1600 bandwidth supports high-throughput packet processing without bottlenecks.
Recomendado
Industrial Automation
The NT5CB256M16CP-DII is well-suited for PLCs, robotics controllers, and HMI panels. Its industrial temperature range (-40C to +95C) ensures operation in factory floors and outdoor installations. The 4Gb density allows storing large control programs and data logs. Low power consumption reduces heat generation, simplifying thermal design in sealed enclosures. The device's robustness and long lifecycle support industrial applications requiring 10+ year availability.
Recomendado
Automotive Infotainment
For automotive infotainment systems, the NT5CB256M16CP-DII provides high-bandwidth memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power draw from the vehicle's electrical system. The industrial temperature range covers most automotive cabin environments. The device's compact FBGA package fits space-constrained head units. DDR3L-1600 speed supports smooth video playback and responsive UI. For strict automotive grade, consider the -DIA variant.
Recomendado
Medical Devices
In medical imaging, patient monitors, and diagnostic equipment, the NT5CB256M16CP-DII offers reliable, low-power memory. Its industrial temperature range ensures stable operation in clinical environments. The 4Gb capacity supports storing high-resolution images and patient data. Low voltage reduces heat, which is critical for portable devices. The device's long-term availability and RoHS compliance meet medical regulatory requirements. DDR3L-1600 bandwidth enables real-time data processing.
Recomendado
Test & Measurement
The NT5CB256M16CP-DII is used in oscilloscopes, logic analyzers, and signal generators for data acquisition and waveform storage. Its high density and speed allow capturing long records at high sample rates. The industrial temperature range supports benchtop and field instruments. Low power consumption is beneficial for battery-operated portable testers. The device's reliability ensures consistent performance in demanding measurement applications.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5CB256M16CP-DII — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5CB256M16CP-DIA | NT5CB256M16DP-DI | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3L-1600 | DDR3L-1600 | DDR3L-1600 | DDR3L-1600 |
| CAS Latency | CL11 | CL11 | CL11 | CL11 |
| Temperature Range | -40C to +95C | -40C to +105C (automotive) | -40C to +95C | -40C to +95C |
Diferenciadores clave
- Industrial temperature range (frente a NT5CB256M16CP-DIA)
- Low voltage operation (frente a MT41K256M16TW-107)
- Pin compatibility (frente a IS43TR16512B-125KBLI)
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for address and data lines to reduce signal integrity issues. Follow the layout guidelines in the Nanya datasheet for DDR3L routing.
The industrial temperature range allows operation up to 95C, but ensure adequate airflow or heatsinking in high-ambient environments. The device's power dissipation depends on operating frequency and load; calculate worst-case power and verify junction temperature stays within limits.
Ensure VDD and VDDQ are within 1.283V to 1.45V. Do not exceed the absolute maximum ratings. Properly terminate the clock and data lines with ODT settings. Verify the mode register programming for correct CAS latency and burst length.
Información de cumplimiento
RoHS and REACH compliant per distributor data. Not AEC-Q100 qualified; use -DIA variant for automotive.
