W634GU6RB11J - 4Gb DDR3L SDRAM x16 933MHz | Winbond
Référence : W634GU6RB11J ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $13.87 | $13,87 |
| 10 | $12.5 | $125,00 |
| 100 | $11.2 | $1 120,00 |
| 500 | $10.1 | $5 050,00 |
| 1 000 | $9.5 | $9 500,00 |
W634GU6RB11J Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.
Key features include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (DTC). These features enhance signal integrity and simplify system design. The device supports industrial temperature range from -40°C to +95°C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, aligning with environmental standards.
Technically, the W634GU6RB11J uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The memory array is organized in 8 banks, and the device supports programmable CAS latency (CL) and additive latency (AL) for flexible timing. The on-die termination (ODT) feature improves signal quality by matching impedance, reducing reflections on the data bus.
Typical applications include networking equipment, industrial automation, medical devices, and embedded computing systems where high-density, low-power memory is required. The 4Gb density and x16 organization make it ideal for applications needing moderate memory capacity with a wide data bus.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, including controlled impedance traces and proper termination.
Alternatives de remplacement direct pour W634GU6RB11J — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W634GU6RB11J (même facteur de forme et même empreinte) — différant par Operating Temperature, Package, Supply Voltage, Clock Frequency, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W634GU6RB-11
✅ Remplacement direct✓ En stock
$13.5227 / unité
Voir la fiche technique →W634GU6RB11K
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT41K256M16TW-107
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.1 / unité
Voir la fiche technique →IS43TR16512BL-107MBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →W634GU6RB11J Valeurs maximales et caractéristiques électriques
| Type de mémoire | SDRAM - DDR3L |
| Taille de mémoire | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Débit de données | 1866 MT/s |
| Interface | Parallel |
| Tension d'alimentation | 1.35V |
| Latence CAS | 20 ns |
| Boîtier | 96-VFBGA (7.5x13 mm) |
| Température de fonctionnement | -40°C to +95°C |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
Configuration des broches de W634GU6RB11J
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
Applications typiques
W634GU6RB11J convient pour 6 applications: Networking Equipment, Industrial Automation, Medical Devices, Embedded Computing, Automotive Infotainment, Test & Measurement.
Networking Equipment
The W634GU6RB11J provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1866 MT/s data rate support high-bandwidth packet processing. The 1.35V operation reduces power consumption in 24/7 operation, and the industrial temperature range ensures reliability in telecom cabinets. The x16 interface simplifies PCB routing, and features like write leveling improve signal integrity at high speeds.
Recommandé
Industrial Automation
In industrial controllers, the W634GU6RB11J offers reliable memory for real-time data logging and control algorithms. Its -40°C to +95°C range suits factory floors, and auto self-refresh maintains data integrity during power-saving modes. The 1.35V supply reduces heat generation, and the 96-ball VFBGA package withstands vibration. The 4Gb density supports complex HMI applications without external storage.
Recommandé
Medical Devices
The W634GU6RB11J is ideal for medical imaging and patient monitoring systems that require high-speed, low-power memory. Its 1866 MT/s data rate enables fast image processing, while 1.35V operation extends battery life in portable devices. The industrial temperature range ensures reliable operation in clinical environments. The x16 interface simplifies connection to medical-grade processors, and features like DTC improve signal quality for error-free data transfer.
Recommandé
Embedded Computing
For embedded systems like single-board computers and IoT gateways, the W634GU6RB11J provides a balance of capacity and power efficiency. Its 4Gb size supports Linux-based applications, and the 1.35V supply is compatible with low-power SoCs. The 96-ball VFBGA package is compact for space-constrained designs. Features like ZQ calibration ensure reliable operation across temperature variations, making it suitable for outdoor IoT deployments.
Recommandé
Automotive Infotainment
The W634GU6RB11J supports automotive infotainment systems requiring high-bandwidth memory for navigation and multimedia. Its 1866 MT/s data rate handles HD video playback, and the 1.35V supply reduces heat in the cabin. The industrial temperature range covers automotive environments, and features like write leveling ensure stable operation. The x16 interface connects easily to automotive SoCs, and the compact package fits head units.
Recommandé
Test & Measurement
In oscilloscopes and data acquisition systems, the W634GU6RB11J provides fast, reliable memory for waveform storage. Its 1866 MT/s data rate enables high-speed sampling, and the 4Gb capacity stores long records. The 1.35V operation reduces noise, and the industrial temperature range ensures accuracy in lab and field use. The x16 interface simplifies connection to FPGAs, and features like auto precharge improve efficiency.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W634GU6RB11J — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W634GU6RB-11 | W634GU6RB11K | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | Winbond Electronics | Micron Technology |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature range (vs MT41K256M16TW-107)
- Renewable energy option (vs W634GU6RB-11)
- Low power consumption (vs K4B4G1646E-BYMA)
Notes de conception
Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to each VDD and VDDQ pin to minimize power supply noise. Follow JEDEC DDR3L layout guidelines for controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) and maintain equal trace lengths for DQ and DQS signals to ensure signal integrity at 1866 MT/s.
The W634GU6RB11J operates over -40°C to +95°C. In high-ambient-temperature environments, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V supply reduces power dissipation, but at 1866 MT/s, the device can still generate significant heat. Use thermal vias under the package to improve heat transfer to the PCB.
Do not exceed the absolute maximum ratings for VDD (1.575V) and VDDQ (1.575V). Ensure the memory controller is configured for DDR3L (1.35V) operation, not DDR3 (1.5V), to avoid damage. Also, verify that the CAS latency and timing parameters match the controller's settings to prevent data corruption.
Informations de conformité
RoHS and halogen-free per Winbond. AEC-Q100 not specified for this part; automotive variants may be available.
