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Winbond

W634GU6RB11J - 4Gb DDR3L SDRAM x16 933MHz | Winbond

料号: W634GU6RB11J ✓ 量产中
有现货 1-3 个工作日内发货
1.35V Vdss 96-VFBGA (7.5x13 mm) Package 933 MHz Speed SDRAM - DDR3L Memory
低至 $9.5 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-17
批量定价
数量 单价 小计
1 $13.87 $13.87
10 $12.5 $125.00
100 $11.2 $1,120.00
500 $10.1 $5,050.00
1,000 $9.5 $9,500.00
ℹ️ 所有价格均以 USD 计价

W634GU6RB11J 概述

The Winbond W634GU6RB11J is a 4Gbit DDR3L SDRAM organized as 256M x 16, operating at a clock frequency of 933 MHz (DDR3L-1866) with a data rate of 1866 MT/s. It is housed in a 96-ball VFBGA package (7.5x13 mm) and operates from a 1.35V supply, making it suitable for low-power applications. The device supports parallel interface with a burst length of 8 and features a 20 ns CAS latency.

DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.

Key features include auto self-refresh, auto precharge, data mask, write leveling, ZQ calibration, asynchronous reset, and dynamic on-chip termination (DTC). These features enhance signal integrity and simplify system design. The device supports industrial temperature range from -40°C to +95°C, making it suitable for harsh environments. It is RoHS compliant and halogen-free, aligning with environmental standards.

Technically, the W634GU6RB11J uses a 96-ball VFBGA package with a 0.8mm ball pitch, providing excellent thermal and electrical performance. The memory array is organized in 8 banks, and the device supports programmable CAS latency (CL) and additive latency (AL) for flexible timing. The on-die termination (ODT) feature improves signal quality by matching impedance, reducing reflections on the data bus.

Typical applications include networking equipment, industrial automation, medical devices, and embedded computing systems where high-density, low-power memory is required. The 4Gb density and x16 organization make it ideal for applications needing moderate memory capacity with a wide data bus.

When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins to minimize power supply noise. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, including controlled impedance traces and proper termination.

直接替换替代料: W634GU6RB11J ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: W634GU6RB11J (相同外形与封装尺寸) ——差异在于 Operating Temperature, Package, Supply Voltage, Clock Frequency, Data Rate.

Samsung Electronics
Operating Temperature: 0°C to +95°C
Package: FBGA-96
Supply Voltage: 1.35 V (1.28 V to 1.575 V)
对比 W634GU6RB11J →
Micron Technology
Operating Temperature: 0C to +95C (commercial :P grade)
Package: 96-FBGA (8x14 mm)
Supply Voltage: 1.35 V
对比 W634GU6RB11J →
Winbond
Supply Voltage: 1.35V (1.283V to 1.45V)
对比 W634GU6RB11J →
Winbond
Operating Temperature: -40C to +95C
Supply Voltage: 1.35 V
Clock Frequency: 1.067 GHz
对比 W634GU6RB11J →
Winbond
Operating Temperature: 0°C to +95°C (Tc)
Package: 96-VFBGA (7.5x13mm)
Data Rate: 1066 MHz (DDR3L-2133)
对比 W634GU6RB11J →

快速对比工具——选择替代料号进行并排对比:

W634GU6RB-11

✅ 直接替换
Winbond
📦 96-VFBGA (7.5x13)
DDR3L SDRAM · 4Gbit (256M x 16) · Parallel · 933 MHz · 1866 MT/s · 20 ns · 1.35V (1.283V to 1.45V) · 96-VFBGA (7.5x13 mm)

✓ 有现货

$13.5227 / 个

查看数据手册 →

W634GU6RB11K

✅ 直接替换
📦 96-VFBGA (7.5x13)
Identical specs, manufactured with renewable energy

📋 参考替代料(不在目录中)

MT41K256M16TW-107

✅ 直接替换 ⚠️ 规格未核验
Micron Technology
📦 96-FBGA (7.5x13)
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

✓ 有现货

$14.1 / 个

查看数据手册 →

IS43TR16512BL-107MBL

✅ 直接替换 ⚠️ 规格未核验
📦 96-FBGA (7.5x13)
Cross-brand, 4Gb DDR3L x16, similar timing

📋 参考替代料(不在目录中)

K4B4G1646E-BYMA

✅ 直接替换 ⚠️ 规格未核验
Samsung Electronics
📦 96-FBGA (7.5x13)
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.28 V to 1.575 V) · 933 MHz · 1866 Mbps/pin · 0°C to +95°C · 14 mA

✓ 有现货

$14.3182 / 个

查看数据手册 →

W634GU6RB11J 最大额定值与电气特性

存储器类型 SDRAM - DDR3L
存储容量 4Gbit (256M x 16)
Clock Frequency 933 MHz
数据速率 1866 MT/s
接口 Parallel
电源电压 1.35V
CAS 延迟 20 ns
封装 96-VFBGA (7.5x13 mm)
工作温度 -40°C to +95°C
安装类型 Surface Mount
RoHS 状态 Compliant
无卤 Yes
Auto Self-Refresh Yes
Write Leveling Yes
ZQ Calibration Yes

W634GU6RB11J 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply
引脚 A2 DQ0 — Data input/output 0
引脚 A3 DQ1 — Data input/output 1
引脚 B1 VSS — Ground
引脚 B2 DQ2 — Data input/output 2
引脚 B3 DQ3 — Data input/output 3
引脚 C1 VDDQ — I/O power supply
引脚 C2 DQ4 — Data input/output 4
引脚 C3 DQ5 — Data input/output 5
引脚 D1 VSSQ — I/O ground
引脚 D2 DQ6 — Data input/output 6
引脚 D3 DQ7 — Data input/output 7

典型应用

W634GU6RB11J 适用于 6 应用s: Networking Equipment, Industrial Automation, Medical Devices, Embedded Computing, Automotive Infotainment, Test & Measurement.

🌐

Networking Equipment

The W634GU6RB11J provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1866 MT/s data rate support high-bandwidth packet processing. The 1.35V operation reduces power consumption in 24/7 operation, and the industrial temperature range ensures reliability in telecom cabinets. The x16 interface simplifies PCB routing, and features like write leveling improve signal integrity at high speeds.

🏭

Industrial Automation

In industrial controllers, the W634GU6RB11J offers reliable memory for real-time data logging and control algorithms. Its -40°C to +95°C range suits factory floors, and auto self-refresh maintains data integrity during power-saving modes. The 1.35V supply reduces heat generation, and the 96-ball VFBGA package withstands vibration. The 4Gb density supports complex HMI applications without external storage.

💊

Medical Devices

The W634GU6RB11J is ideal for medical imaging and patient monitoring systems that require high-speed, low-power memory. Its 1866 MT/s data rate enables fast image processing, while 1.35V operation extends battery life in portable devices. The industrial temperature range ensures reliable operation in clinical environments. The x16 interface simplifies connection to medical-grade processors, and features like DTC improve signal quality for error-free data transfer.

🧩

Embedded Computing

For embedded systems like single-board computers and IoT gateways, the W634GU6RB11J provides a balance of capacity and power efficiency. Its 4Gb size supports Linux-based applications, and the 1.35V supply is compatible with low-power SoCs. The 96-ball VFBGA package is compact for space-constrained designs. Features like ZQ calibration ensure reliable operation across temperature variations, making it suitable for outdoor IoT deployments.

🚗

Automotive Infotainment

The W634GU6RB11J supports automotive infotainment systems requiring high-bandwidth memory for navigation and multimedia. Its 1866 MT/s data rate handles HD video playback, and the 1.35V supply reduces heat in the cabin. The industrial temperature range covers automotive environments, and features like write leveling ensure stable operation. The x16 interface connects easily to automotive SoCs, and the compact package fits head units.

🔧

Test & Measurement

In oscilloscopes and data acquisition systems, the W634GU6RB11J provides fast, reliable memory for waveform storage. Its 1866 MT/s data rate enables high-speed sampling, and the 4Gb capacity stores long records. The 1.35V operation reduces noise, and the industrial temperature range ensures accuracy in lab and field use. The x16 interface simplifies connection to FPGAs, and features like auto precharge improve efficiency.

What is the memory size of W634GU6RB11J?
The W634GU6RB11J has a memory size of 4Gbit, organized as 256M x 16. According to Winbond's datasheet, it is a DDR3L SDRAM with a parallel interface and operates at 933 MHz.
What is the operating voltage of W634GU6RB11J?
The W634GU6RB11J operates at 1.35V, which is the DDR3L standard voltage. This low voltage reduces power consumption compared to standard DDR3 (1.5V), making it suitable for power-sensitive applications.
What is the price of W634GU6RB11J?
As of 2026-08-18, the price of W634GU6RB11J is approximately $13.87 for a single unit, with volume pricing available. For example, at 1000 units, the price drops to around $9.50 per unit, as listed on LCSC.
Where can I buy W634GU6RB11J?
W634GU6RB11J is available from authorized distributors such as DigiKey, Mouser, and LCSC. You can also purchase directly from Winbond's online purchasing guide. Check stock and pricing on these platforms for the latest availability.
What is the lead time for W634GU6RB11J?
The lead time for W634GU6RB11J varies by distributor and current demand. As of 2026-08-18, LCSC shows in stock, indicating immediate availability. For larger quantities, lead times may extend to 8-12 weeks, so it's best to check with your preferred distributor.
Is W634GU6RB11J in stock?
Yes, as of 2026-08-18, W634GU6RB11J is in stock at LCSC with 2,889 units available. DigiKey and Mouser also list it as active, but stock levels may vary. Check their websites for real-time inventory.
W634GU6RB11J vs W634GU6RB-11: what is the difference?
W634GU6RB11J and W634GU6RB-11 are essentially the same part; the suffix 'J' may indicate a specific packaging or revision. According to Winbond, all specifications are identical, and the 'J' variant is often used for ordering purposes. They are drop-in replacements for each other.
What is the difference between W634GU6RB11J and W634GU6RB11K?
The W634GU6RB11K is identical to W634GU6RB11J in all specifications and features; the only difference is the manufacturing electricity source. The 'K' variant is produced using renewable energy, as noted in Winbond's online purchasing guide. Both are pin-compatible and functionally equivalent.
When should I choose W634GU6RB11J over a DDR3 part?
Choose W634GU6RB11J when you need lower power consumption (1.35V vs 1.5V) and are designing for battery-powered or thermally constrained systems. It is also ideal for industrial applications requiring -40°C to +95°C operation. If your system already uses DDR3L, this is a direct fit.
Is W634GU6RB11J suitable for industrial applications?
Yes, W634GU6RB11J is suitable for industrial applications because it operates over -40°C to +95°C and supports features like auto self-refresh and write leveling. Winbond also offers AEC-Q100 qualified versions for automotive, but this standard part is designed for industrial use.
What is the best drop-in replacement for W634GU6RB11J?
The best drop-in replacement for W634GU6RB11J is the W634GU6RB-11, which is the same part with a different suffix. Other pin-compatible alternatives include the W634GU6NB-11 (if available) and Micron's MT41K256M16TW-107, but verify pinout and timing before use.
Can W634GU6RB11K replace W634GU6RB11J?
Yes, W634GU6RB11K can replace W634GU6RB11J because they are identical in specifications and pinout. The only difference is the manufacturing electricity source, which does not affect functionality. It is a direct drop-in replacement.
Where can I download the W634GU6RB11J datasheet PDF?
You can download the W634GU6RB11J datasheet PDF from Winbond's official website or from distributor sites like DigiKey and Mouser. The datasheet provides detailed specifications, pinout, and timing diagrams.
What are the key specifications of W634GU6RB11J that engineers should know?
Engineers should know that W634GU6RB11J is a 4Gbit DDR3L SDRAM with x16 organization, 933 MHz clock, 1.35V supply, and 96-ball VFBGA package. It supports industrial temperature range and features like auto self-refresh and ZQ calibration. These specs make it suitable for low-power, high-density memory applications.
What is the best Micron equivalent for W634GU6RB11J?
The best Micron equivalent for W634GU6RB11J is the MT41K256M16TW-107, which is a 4Gb DDR3L SDRAM in a 96-ball FBGA package. However, verify pin compatibility and timing parameters before using it as a drop-in replacement, as Micron's pinout may differ slightly.

工程参考数据: W634GU6RB11J ——对比、设计指导和合规信息。

选型指南

Choose the W634GU6RB11J when you need a 4Gb DDR3L SDRAM with industrial temperature range and low power consumption. It is ideal for networking, industrial, and medical applications. If you require a renewable energy manufacturing option, select the W634GU6RB11K. For automotive-grade parts, consider Winbond's AEC-Q100 qualified variants. Cross-brand alternatives like Micron's MT41K256M16TW-107 are suitable if you need a second source, but verify pinout and temperature range. The W634GU6RB-11 is the same part with a different suffix, so it is a direct drop-in replacement.

与替代料对比

参数 本产品 W634GU6RB-11 W634GU6RB11K MT41K256M16TW-107
Package 96-VFBGA (7.5x13) 96-VFBGA (7.5x13) 96-VFBGA (7.5x13) 96-FBGA (7.5x13)
Brand Winbond Electronics Winbond Electronics Winbond Electronics Micron Technology
Memory Size 4Gbit 4Gbit 4Gbit 4Gbit
Organization 256M x 16 256M x 16 256M x 16 256M x 16
Clock Frequency 933 MHz 933 MHz 933 MHz 933 MHz
Supply Voltage 1.35V 1.35V 1.35V 1.35V
Operating Temperature -40°C to +95°C -40°C to +95°C -40°C to +95°C 0°C to +95°C
RoHS Compliant Compliant Compliant Compliant

关键差异点

  • Industrial temperature range (对比 MT41K256M16TW-107)
  • Renewable energy option (对比 W634GU6RB-11)
  • Low power consumption (对比 K4B4G1646E-BYMA)

设计说明

Ensure proper decoupling capacitors (0.1uF and 1uF) are placed close to each VDD and VDDQ pin to minimize power supply noise. Follow JEDEC DDR3L layout guidelines for controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) and maintain equal trace lengths for DQ and DQS signals to ensure signal integrity at 1866 MT/s.

The W634GU6RB11J operates over -40°C to +95°C. In high-ambient-temperature environments, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V supply reduces power dissipation, but at 1866 MT/s, the device can still generate significant heat. Use thermal vias under the package to improve heat transfer to the PCB.

Do not exceed the absolute maximum ratings for VDD (1.575V) and VDDQ (1.575V). Ensure the memory controller is configured for DDR3L (1.35V) operation, not DDR3 (1.5V), to avoid damage. Also, verify that the CAS latency and timing parameters match the controller's settings to prevent data corruption.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
无铅
Yes
无卤
Yes
冲突矿物
Unknown

RoHS and halogen-free per Winbond. AEC-Q100 not specified for this part; automotive variants may be available.

数据核验日期: 2026-08-18 ——数据由 XAIPART 元器件工程团队核验和整理

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相关元器件 & 术语

Winbond Electronics W634GU6RB11J W634GU6RB-11 W634GU6RB11K MT41K256M16TW-107 DDR3L SDRAM 4Gbit 256M x 16 933 MHz 1.35V 96-VFBGA RoHS Halogen-Free Industrial temperature range
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