K9ADGD8S0A vs K9PRGY8S7M مقایسه
مقایسه دقیق کنار به کنار K9ADGD8S0A توسط Samsung Electronics و K9PRGY8S7M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ فعالمقایسه مشخصات
| پارامتر | K9ADGD8S0A | K9PRGY8S7M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | EEPROM | Memory ICs |
| وضعیت چرخه عمر | پایان عمر محصول | فعال |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| رابط | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E cycles] |
| دمای کاری | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature] |
| بسته‌بندی | [DATA_NEEDED: package] | — |
| نوع حافظه | — | NAND Flash |
| Density | — | [DATA_NEEDED: density] |
| سازمان | — | [DATA_NEEDED: organization] |
| نوع رابط | — | [DATA_NEEDED: interface type] |
| Block Size | — | [DATA_NEEDED: block size] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| نوع نصب | — | Surface Mount |
| وضعیت RoHS | — | [DATA_NEEDED: RoHS status] |
| سطح MSL | — | [DATA_NEEDED: MSL level] |