K9PRGY8S7M vs K9ADGD8S0A مقایسه
مقایسه دقیق کنار به کنار K9PRGY8S7M توسط Samsung Electronics و K9ADGD8S0A توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ فعالمقایسه مشخصات
| پارامتر | K9PRGY8S7M | K9ADGD8S0A |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | EEPROM |
| وضعیت چرخه عمر | فعال | پایان عمر محصول |
| نوع حافظه | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Density | [DATA_NEEDED: density] | — |
| سازمان | [DATA_NEEDED: organization] | — |
| نوع رابط | [DATA_NEEDED: interface type] | — |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycles] | [DATA_NEEDED: endurance] |
| Access Time | [DATA_NEEDED: access time] | — |
| Package Type | BGA (surface mount) | — |
| Package Pin/Ball Count | [DATA_NEEDED: ball count] | — |
| نوع نصب | Surface Mount | — |
| دمای کاری | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature] |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | — |
| سطح MSL | [DATA_NEEDED: MSL level] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |
| رابط | — | [DATA_NEEDED: interface type] |
| بسته‌بندی | — | [DATA_NEEDED: package] |