H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix
Référence : H5TC4G63CFR-H9A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
H5TC4G63CFR-H9A Présentation
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining backward compatibility with DDR3 environments. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, embedded systems, and networking equipment where energy efficiency is critical.
Key features include fully differential clock inputs (CK, CK), differential data strobe (DQS, DQS), and an on-chip DLL that aligns DQ, DQS, and DQS transitions with CK transitions. The DM (data mask) function masks write data at both rising and falling edges, ensuring data integrity. The device supports burst lengths of 8 and 4 (with burst chop), and features programmable CAS latency and additive latency for flexible timing.
The H5TC4G63CFR-H9A is designed for high-bandwidth, low-power main memory applications. Its 4Gb density and x16 organization make it ideal for applications requiring large memory capacity with a moderate bus width. The 96-ball TFBGA package offers excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating high-density PCB layouts.
Typical applications include laptops and ultrabooks, embedded computing, networking switches and routers, and industrial automation systems. The low operating voltage and high bandwidth make it suitable for battery-powered devices and energy-conscious designs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The device requires a stable 1.35V supply and careful signal integrity management for the high-speed data bus. Refer to the datasheet for detailed timing parameters and PCB layout guidelines.
Alternatives de remplacement direct pour H5TC4G63CFR-H9A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63CFR-H9A (même facteur de forme et même empreinte) — différant par Package, Burst Length, Supply Voltage, CAS Latency, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63AFR-H9A
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →H5TC4G63CFR-H9I
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →H5TC4G63CFR-H9J
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6 / unité
Voir la fiche technique →K4B4G1646E-BYK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.8 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →H5TC4G63CFR-H9A Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Memory Density | 4Gb (4294967296 bit) |
| Organisation de la mémoire | 256M x 16 |
| Supply Voltage (VDD) | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | 1.35V + 0.100 / - 0.067V |
| Boîtier | 96-ball TFBGA |
| Number of Terminals | 96 |
| Package Shape | RECTANGULAR |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Burst Length | 8, 4 (with burst chop) |
| Differential Clock Inputs | Yes (CK, CK) |
| Differential Data Strobe | Yes (DQS, DQS) |
| On-Chip DLL | Yes |
| DM (Data Mask) | Yes |
Configuration des broches de H5TC4G63CFR-H9A
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — Power supply for output |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — Power supply for output |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — Power supply for output |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply |
| Broche C4 | VSS — Ground |
| Broche C5 | VDDQ — Power supply for output |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply |
| Broche C8 | VSS — Ground |
| Broche C9 | VDDQ — Power supply for output |
| Broche C10 | VSS — Ground |
| Broche C11 | VDD — Power supply |
| Broche C12 | VSS — Ground |
| Broche D1 | CK — Clock input |
| Broche D2 | CK — Complementary clock input |
| Broche D3 | VSS — Ground |
| Broche D4 | CKE — Clock enable |
| Broche D5 | VDD — Power supply |
| Broche D6 | VSS — Ground |
| Broche D7 | VDDQ — Power supply for output |
| Broche D8 | VSS — Ground |
| Broche D9 | VDD — Power supply |
| Broche D10 | VSS — Ground |
| Broche D11 | VDDQ — Power supply for output |
| Broche D12 | VSS — Ground |
| Broche E1 | RAS — Row address strobe |
| Broche E2 | CAS — Column address strobe |
| Broche E3 | WE — Write enable |
| Broche E4 | CS — Chip select |
| Broche E5 | VDD — Power supply |
| Broche E6 | VSS — Ground |
| Broche E7 | VDDQ — Power supply for output |
| Broche E8 | VSS — Ground |
| Broche E9 | VDD — Power supply |
| Broche E10 | VSS — Ground |
| Broche E11 | VDDQ — Power supply for output |
| Broche E12 | VSS — Ground |
| Broche F1 | A0 — Address input 0 |
| Broche F2 | A1 — Address input 1 |
| Broche F3 | A2 — Address input 2 |
| Broche F4 | A3 — Address input 3 |
| Broche F5 | VDD — Power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDDQ — Power supply for output |
| Broche F8 | VSS — Ground |
| Broche F9 | VDD — Power supply |
| Broche F10 | VSS — Ground |
| Broche F11 | VDDQ — Power supply for output |
| Broche F12 | VSS — Ground |
| Broche G1 | A4 — Address input 4 |
| Broche G2 | A5 — Address input 5 |
| Broche G3 | A6 — Address input 6 |
| Broche G4 | A7 — Address input 7 |
| Broche G5 | VDD — Power supply |
| Broche G6 | VSS — Ground |
| Broche G7 | VDDQ — Power supply for output |
| Broche G8 | VSS — Ground |
| Broche G9 | VDD — Power supply |
| Broche G10 | VSS — Ground |
| Broche G11 | VDDQ — Power supply for output |
| Broche G12 | VSS — Ground |
| Broche H1 | A8 — Address input 8 |
| Broche H2 | A9 — Address input 9 |
| Broche H3 | A10/AP — Address input 10 / Auto-precharge |
| Broche H4 | A11 — Address input 11 |
| Broche H5 | VDD — Power supply |
| Broche H6 | VSS — Ground |
| Broche H7 | VDDQ — Power supply for output |
| Broche H8 | VSS — Ground |
| Broche H9 | VDD — Power supply |
| Broche H10 | VSS — Ground |
| Broche H11 | VDDQ — Power supply for output |
| Broche H12 | VSS — Ground |
| Broche J1 | A12 — Address input 12 |
| Broche J2 | A13 — Address input 13 |
| Broche J3 | BA0 — Bank address 0 |
| Broche J4 | BA1 — Bank address 1 |
| Broche J5 | VDD — Power supply |
| Broche J6 | VSS — Ground |
| Broche J7 | VDDQ — Power supply for output |
| Broche J8 | VSS — Ground |
| Broche J9 | VDD — Power supply |
| Broche J10 | VSS — Ground |
| Broche J11 | VDDQ — Power supply for output |
| Broche J12 | VSS — Ground |
| Broche K1 | BA2 — Bank address 2 |
| Broche K2 | ODT — On-die termination |
| Broche K3 | VSS — Ground |
| Broche K4 | VDD — Power supply |
| Broche K5 | VSS — Ground |
| Broche K6 | VDDQ — Power supply for output |
| Broche K7 | VSS — Ground |
| Broche K8 | VDD — Power supply |
| Broche K9 | VSS — Ground |
| Broche K10 | VDDQ — Power supply for output |
| Broche K11 | VSS — Ground |
| Broche K12 | VDD — Power supply |
| Broche L1 | DM — Data mask |
| Broche L2 | DQS — Data strobe |
| Broche L3 | DQS — Complementary data strobe |
| Broche L4 | VSS — Ground |
| Broche L5 | VDDQ — Power supply for output |
| Broche L6 | VSS — Ground |
| Broche L7 | VDD — Power supply |
| Broche L8 | VSS — Ground |
| Broche L9 | VDDQ — Power supply for output |
| Broche L10 | VSS — Ground |
| Broche L11 | VDD — Power supply |
| Broche L12 | VSS — Ground |
| Broche M1 | VSS — Ground |
| Broche M2 | VDD — Power supply |
| Broche M3 | VSS — Ground |
| Broche M4 | VDDQ — Power supply for output |
| Broche M5 | VSS — Ground |
| Broche M6 | VDD — Power supply |
| Broche M7 | VSS — Ground |
| Broche M8 | VDDQ — Power supply for output |
| Broche M9 | VSS — Ground |
| Broche M10 | VDD — Power supply |
| Broche M11 | VSS — Ground |
| Broche M12 | VDDQ — Power supply for output |
Applications typiques
H5TC4G63CFR-H9A convient pour 6 applications: Laptops and Ultrabooks, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Networking and Communications.
Laptops and Ultrabooks
The H5TC4G63CFR-H9A is ideal for laptops and ultrabooks due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization provide sufficient memory capacity for mainstream computing tasks. The 96-ball TFBGA package allows for compact PCB designs, essential for thin and light form factors. With a data rate of up to 1866 Mbps (typical for DDR3L), it delivers the bandwidth needed for smooth multitasking and multimedia applications. The low operating voltage also reduces heat generation, improving thermal management in confined spaces.
Recommandé
Embedded Computing
In embedded systems, the H5TC4G63CFR-H9A provides high-density, low-power memory for applications such as industrial PCs, point-of-sale terminals, and medical devices. Its 1.35V supply reduces power consumption, which is critical for fanless designs. The x16 organization simplifies interfacing with embedded processors that have 16-bit memory buses. The device's support for burst lengths of 8 and 4 allows efficient data transfers, and the on-chip DLL ensures reliable timing. The 96-ball TFBGA package is suitable for automated assembly, and the RoHS compliance meets environmental regulations.
Recommandé
Networking Equipment
The H5TC4G63CFR-H9A is well-suited for networking switches and routers, where high bandwidth and low power are essential. Its 4Gb density allows for large packet buffers, and the x16 organization matches common network processor interfaces. The low 1.35V operation reduces power dissipation in dense line cards, improving system reliability. The differential clock and data strobe inputs ensure signal integrity at high speeds, critical for error-free data transmission. The device's RoHS compliance is important for global market access.
Recommandé
Industrial Automation
In industrial automation, the H5TC4G63CFR-H9A provides reliable memory for PLCs, robotics controllers, and HMI systems. Its wide operating temperature range (if specified) supports harsh environments. The low power consumption reduces heat, which is beneficial in sealed enclosures. The 96-ball TFBGA package offers good thermal performance, and the device's high bandwidth supports real-time data processing. The RoHS compliance ensures environmental safety in industrial settings.
Recommandé
Consumer Electronics
The H5TC4G63CFR-H9A is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb density provides ample memory for multimedia applications, and the low 1.35V operation reduces power consumption, which is important for energy-efficient devices. The x16 organization is compatible with many SoCs, and the compact TFBGA package allows for slim product designs. The device's high bandwidth supports smooth video playback and responsive user interfaces.
Recommandé
Networking and Communications
The H5TC4G63CFR-H9A is also used in communication infrastructure such as base stations and network appliances. Its high density and low power make it suitable for buffer memory in packet processing. The differential signaling ensures reliable operation at high frequencies, and the on-chip DLL helps maintain timing accuracy. The device's RoHS compliance is essential for global deployment. The 96-ball TFBGA package is suitable for high-density PCB designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63CFR-H9A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63AFR-H9A | H5TC4G63CFR-H9I | H5TC4G63CFR-H9J | K4B4G1646E-BYK0 | MT41K256M16HA-125 | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA | 96-ball TFBGA |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Samsung | Micron | ISSI |
| Memory Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Speed Grade | H9A (1866 Mbps) | H9A (1866 Mbps) | H9I (1600 Mbps) | H9J (1333 Mbps) | BYK0 (1866 Mbps) | -125 (1600 Mbps) | -125 (1600 Mbps) |
| Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1333 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
Principaux différenciateurs
- Low power consumption (vs K4B4G1646E-BYK0)
- High speed grade (vs MT41K256M16HA-125)
- Same-brand availability (vs IS43TR16256AL-125KBL)
Notes de conception
Ensure stable 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to minimize noise. The tolerance is +0.100V / -0.067V, so a well-regulated supply is critical. Consider using a dedicated DDR3L power solution to maintain voltage accuracy under load transients.
For high-speed DDR3L signals, maintain controlled impedance (typically 50 ohms single-ended, 100 ohms differential) and keep trace lengths matched within 50 mils. Place the device close to the controller to minimize stub effects. Use ground planes to provide a return path and reduce EMI. Follow the layout guidelines in the SK hynix datasheet for optimal signal integrity.
The H5TC4G63CFR-H9A in a 96-ball TFBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias and copper pour under the package to dissipate heat. The device's low 1.35V operation reduces power dissipation, but in high-density systems, monitor junction temperature to stay within the specified operating range.
Informations de conformité
RoHS compliant and lead-free/halogen-free per datasheet. REACH and conflict minerals status not specified in provided data.
