H5TC4G63AFR-PBJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
Référence : H5TC4G63AFR-PBJ ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $10.23 | $10,23 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8 | $4 000,00 |
| 1 000 | $7.5 | $7 500,00 |
H5TC4G63AFR-PBJ Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, offering a 15% power reduction compared to standard DDR3 at 1.5V. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 256M x 16 organization, 96-ball TFBGA package, industrial temperature grade (-40°C to +95°C), and support for 8192 refresh cycles. The device supports auto self-refresh, data mask, auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and write leveling, ensuring reliable operation in demanding environments.
The H5TC4G63AFR-PBJ uses a CMOS process and features a rectangular package shape. It is designed for high-density, high-bandwidth, and low-power applications. The industrial temperature grade allows operation in harsh conditions, making it ideal for automotive, industrial, and networking applications.
Typical applications include main memory for embedded processors, networking routers and switches, industrial PCs, and test equipment. The low voltage and high bandwidth make it suitable for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices are followed. The ZQ calibration pin requires a 240-ohm resistor to ground for optimal signal quality.
Alternatives de remplacement direct pour H5TC4G63AFR-PBJ — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63AFR-PBJ (même facteur de forme et même empreinte) — différant par Data Rate, Package, Burst Length, CAS Latency, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63AFR-PBR
✅ Remplacement direct✓ En stock
$5.9091 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✅ Remplacement direct✓ En stock
$3.9773 / unité
Voir la fiche technique →H5TC4G63AFR-PBI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →H5TC4G63AFR-G7A
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →H5TC4G63AFR-H9A
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646D-BCK00
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.9 / unité
Voir la fiche technique →MT41K256M16RE-125:D
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$4.19 / unité
Voir la fiche technique →NT5CC256M16ER-EK
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$24 / unité
Voir la fiche technique →H5TC4G63AFR-PBJ Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4 Gb (256M x 16) |
| Tension d'alimentation | 1.35 V |
| Boîtier | 96-ball TFBGA |
| Temperature Grade | Industrial (-40°C to +95°C) |
| Refresh Cycles | 8192 |
| Package Shape | Rectangular |
| Number of Terminals | 96 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Auto Self-Refresh | Yes |
| Data Mask | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
Configuration des broches de H5TC4G63AFR-PBJ
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDDQ — I/O power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | DQ6 — Data input/output 6 |
| Broche C3 | DQ7 — Data input/output 7 |
| Broche C4 | VSS — Ground |
| Broche D1 | VDD — Power supply |
| Broche D2 | A0 — Address input 0 |
| Broche D3 | A1 — Address input 1 |
| Broche D4 | A2 — Address input 2 |
| Broche E1 | A3 — Address input 3 |
| Broche E2 | A4 — Address input 4 |
| Broche E3 | A5 — Address input 5 |
| Broche E4 | A6 — Address input 6 |
| Broche F1 | A7 — Address input 7 |
| Broche F2 | A8 — Address input 8 |
| Broche F3 | A9 — Address input 9 |
| Broche F4 | A10/AP — Address input 10 / Auto-precharge |
| Broche G1 | A11 — Address input 11 |
| Broche G2 | A12 — Address input 12 |
| Broche G3 | A13 — Address input 13 |
| Broche G4 | A14 — Address input 14 |
| Broche H1 | BA0 — Bank address 0 |
| Broche H2 | BA1 — Bank address 1 |
| Broche H3 | BA2 — Bank address 2 |
| Broche H4 | VSS — Ground |
| Broche J1 | CK — Clock input |
| Broche J2 | CK# — Complementary clock input |
| Broche J3 | CKE — Clock enable |
| Broche J4 | CS# — Chip select |
| Broche K1 | RAS# — Row address strobe |
| Broche K2 | CAS# — Column address strobe |
| Broche K3 | WE# — Write enable |
| Broche K4 | ODT — On-die termination |
| Broche L1 | DM0 — Data mask 0 |
| Broche L2 | DM1 — Data mask 1 |
| Broche L3 | ZQ — ZQ calibration (240-ohm resistor to ground) |
| Broche L4 | VDD — Power supply |
Applications typiques
H5TC4G63AFR-PBJ convient pour 6 applications: Embedded Processors, Networking Equipment, Industrial PCs, Test and Measurement, Automotive Infotainment, Medical Devices.
Embedded Processors
The H5TC4G63AFR-PBJ provides 4Gb DDR3L memory for embedded processors, offering high bandwidth and low power at 1.35V. Its industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments. The 256M x 16 organization supports 16-bit data bus widths, ideal for SoCs and FPGAs. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during low-power states, making it suitable for always-on embedded systems.
Recommandé
Networking Equipment
In networking routers and switches, the H5TC4G63AFR-PBJ delivers high-bandwidth memory for packet buffering and forwarding tables. Its 1.35V operation reduces power consumption in 24/7 operation, while the industrial temperature grade supports outdoor and industrial networking gear. The 96-ball TFBGA package enables compact PCB layouts, and features like dynamic on-chip termination and write leveling improve signal integrity at high speeds, ensuring reliable data transmission.
Recommandé
Industrial PCs
Industrial PCs require robust memory that can withstand temperature fluctuations and vibration. The H5TC4G63AFR-PBJ's industrial temperature grade (-40°C to +95°C) and 96-ball TFBGA package provide durability. Its 4Gb density supports multitasking and data logging, while 1.35V operation reduces heat generation. Features like auto precharge and data mask enhance memory efficiency, making it ideal for factory automation and process control systems.
Recommandé
Test and Measurement
Test equipment such as oscilloscopes and logic analyzers require high-speed data acquisition and storage. The H5TC4G63AFR-PBJ offers high bandwidth and low latency, enabling fast waveform capture. Its 1.35V low-power operation is beneficial for portable instruments. The industrial temperature grade ensures accuracy in varying lab conditions. With 8192 refresh cycles and auto self-refresh, it maintains data integrity during long captures, making it a reliable choice for precision measurement.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-PBJ provides high-bandwidth memory for navigation, multimedia, and instrument clusters. Its industrial temperature grade supports under-hood and cabin environments. The 1.35V operation reduces power draw from the vehicle battery. Features like dynamic on-chip termination and write leveling ensure signal integrity in noisy automotive environments. The 96-ball TFBGA package withstands vibration, making it suitable for in-vehicle electronics.
Recommandé
Medical Devices
Medical devices such as patient monitors and diagnostic equipment require reliable, high-capacity memory. The H5TC4G63AFR-PBJ's industrial temperature grade ensures operation in clinical environments. Its 4Gb density supports complex algorithms and data logging. The 1.35V low-power operation is critical for battery-powered portable devices. Features like auto self-refresh and data mask enhance data integrity, making it suitable for life-critical applications where memory reliability is paramount.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63AFR-PBJ — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63AFR-PBR | H5TC4G63AFR-PBA | K4B4G1646D-BCK00 | MT41K256M16RE-125:D |
|---|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Temperature Grade | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
Principaux différenciateurs
- Industrial temperature grade (-40°C to +95°C) (vs K4B4G1646D-BCK00)
- Same-brand drop-in variants with different speed grades (vs H5TC4G63AFR-PBA)
- Cross-brand availability from Samsung and Micron (vs K4B4G1646D-BCK00)
Notes de conception
For optimal signal integrity, route DDR3L traces with controlled impedance (typically 40-60 ohms single-ended, 80-120 ohms differential). Keep trace lengths matched within 50 mils for address/control and 20 mils for data. Place the ZQ pin's 240-ohm resistor (1% tolerance) as close to the ball as possible, with a clean ground return. Use a solid ground plane beneath the memory device to minimize noise.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed within 100 mils of each ball. Use a 10uF bulk capacitor near the memory power input. The 1.35V supply should have low ripple (<50mV) to ensure reliable operation. Consider using a dedicated DDR3L power regulator with good transient response.
The industrial temperature grade allows operation up to +95°C, but ensure adequate airflow or heatsinking if the device is in a confined enclosure. The 96-ball TFBGA package has a thermal resistance that depends on PCB copper area; provide at least 4 thermal vias under the exposed pad to improve heat dissipation. Monitor junction temperature to stay within the specified range.
Informations de conformité
Compliance information not explicitly provided in the verified data. Check the manufacturer datasheet or contact SK Hynix for RoHS/REACH status.
