K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung
MPN: K3LK4K40CM-BGCP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $48.5 | $48.50 |
| 10 | $45.2 | $452.00 |
| 100 | $42.6 | $4,260.00 |
| 500 | $40.1 | $20,050.00 |
| 1,000 | $37.8 | $37,800.00 |
Drop-in alternatives for K3LK4K40CM-BGCP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K3LK4K40BM-BGCN
✅ Drop-In📋 Reference alternative (not in catalog)
K3LK8K80CM-MFCP
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K3LKJKJ0CM-MFCP
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$21.9 / Unit
View Datasheet →K3LK2K20CM-JFCP
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K3LKCKC0BM-MGCP
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$47.9 / Unit
View Datasheet →K3LK4K40CM-BGCP Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) |
| Organization | 1536M x 64 |
| Data Rate | 6400 Mbps per pin |
| Supply Voltage (VDD) | 1.05 V |
| Package | 496-ball FBGA |
| Mounting Type | Surface Mount |
| Interface | LPDDR5 (JEDEC) |
| Refresh Scheme | Per-bank / all-bank refresh |
| Power-Down Modes | Deep sleep / power-down supported |
| Application Segment | Mobile, embedded, computing modules |
K3LK4K40CM-BGCP 496-ball fbga Pin Configuration Guide
Complete pinout information for K3LK4K40CM-BGCP (496-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3LK4K40CM-BGCP.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3LK4K40CM-BGCP is suitable for 6 applications: Flagship Smartphone Main Memory, Tablet and Notebook Computing Modules, Edge AI Accelerator Modules, Industrial Controllers and Data Logging, Automotive Infotainment Memory, Replacement Sourcing and BOM Continuity.
Flagship Smartphone Main Memory
The K3LK4K40CM-BGCP fits flagship smartphone main memory because its 96 Gb (12 GB) density and 6400 Mbps data rate provide the bandwidth headroom that modern application processors require for multitasking, gaming, and on-device AI inference. Its 1.05 V core supply and LPDDR5 deep-sleep modes reduce standby drain, directly extending battery life in always-on devices. In a typical design the memory sits in a point-to-point link with the SoC's LPDDR5 controller; routing discipline and on-die termination settings govern whether the 6400 Mbps rate is stable. Compared with dual-die lower-density packages, a single 96 Gb device simplifies the BOM but requires the controller to support the full density map.
Recommended
Tablet and Notebook Computing Modules
Tablets and compact computing modules use the K3LK4K40CM-BGCP to reach 12 GB of main memory within a single 496-ball FBGA footprint, conserving board area in thin form factors. The 6400 Mbps interface keeps memory bandwidth from bottlenecking mid-range SoCs during multi-window use and media streaming, while the 1.05 V core rail supports thermal envelopes without active cooling. Designers typically place the package near the SoC with matched-length fly-by-free point-to-point routing; LPDDR5's bank-group architecture sustains throughput at moderate refresh overhead. Compared with soldered LPDDR4X of equal capacity, the LPDDR5 device offers roughly 50% higher peak bandwidth per pin at similar or lower power.
Recommended
Edge AI Accelerator Modules
Edge-AI accelerators benefit from the K3LK4K40CM-BGCP's combination of 12 GB capacity and 6400 Mbps bandwidth, which together allow on-device storage of quantized neural-network weights and fast activation streaming. The x64 organization gives accelerators a wide single-device data path, reducing controller complexity versus narrower x32 parts. LPDDR5 deep-sleep states matter in intermittently-active inference nodes, cutting idle power between workloads. Integration places the memory adjacent to the NPU/SoC with careful length matching; performance tuning of refresh intervals and termination preserves sustained bandwidth. Against stacking multiple lower-density LPDDR4 devices, one 96 Gb LPDDR5 package halves component count and reflow risk on dense AI module PCBs.
Recommended
Industrial Controllers and Data Logging
Industrial controllers use the K3LK4K40CM-BGCP as working memory for data buffering, embedded logging, and firmware execution, as outlined in distributor product overviews of this Samsung memory IC. Its 96 Gb capacity absorbs log bursts and protocol buffers in gateways and PLC-class hardware, while the 6400 Mbps interface prevents memory bottlenecks during concurrent sensor aggregation and network transmission. The 1.05 V supply keeps enclosure thermal rise low in fanless cabinets. Designers should confirm the industrial temperature grade with Samsung and secure long-term supply agreements, since this part originates from the mobile product line. Compared with DDR4 SODIMM approaches, the FBGA-mounted LPDDR5 saves space and improves shock tolerance.
Recommended
Automotive Infotainment Memory
Automotive cockpit and infotainment platforms increasingly adopt LPDDR5-class memory; the K3LK4K40CM-BGCP's 12 GB capacity supports multi-display clusters, navigation, and in-cabin sensing workloads concurrently. The 6400 Mbps bandwidth ensures smooth graphics compositing, while the 1.05 V core helps meet the tight thermal budgets behind dashboards. Note that the standard CM-BGCP is not an AEC-Q100-qualified automotive part; automotive programs must obtain Samsung's automotive-graded LPDDR5 variants and qualify them formally. Integration is point-to-point with the SoC memory controller, and extended-temperature validation plus supply continuity planning are essential. Versus dual LPDDR4X devices, one 96 Gb package simplifies layout and improves bandwidth per watt.
Recommended
Replacement Sourcing and BOM Continuity
For procurement teams, the K3LK4K40CM-BGCP serves as a replacement-sourcing target in uMCP and PoP assembly lines where original allocations lapsed; distributor channels list active stock (about 21,660 pcs as of August 31, 2026, per Octopart). Buyers should match the full suffix (CM-BGCP) since Samsung's family uses package and binning codes that change with each variant, and visually similar K3LK parts differ in ball count or speed bin. Verification should include package code review, date-code checks, and functional test at 6400 Mbps on the target platform. This part's active lifecycle status makes it a safer continuity choice than EOL LPDDR4 alternatives of similar capacity.
Recommended
Recommended Products Summary
Engineering reference data for K3LK4K40CM-BGCP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3LK4K40BM-BGCN | K3LK8K80CM-MFCP | K3LK2K20CM-JFCP |
|---|---|---|---|---|
| Package | 496-ball FBGA | FBGA (verify suffix) - closest | FBGA (LPDDR5 family) | FBGA (LPDDR5 family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) | 96 Gb class | 192 Gb class (double) | 48 Gb class (half) |
| Data Rate | 6400 Mbps | 5500-6400 Mbps (binning-dependent) | [DATA_NEEDED] | [DATA_NEEDED] |
| Core Supply Voltage | 1.05 V | 1.05 V | 1.05 V | 1.05 V |
| Organization | 1536M x 64 | x64 (verify) | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | Active | Active | Active |
Key Differentiators
- Highest bandwidth in family tier (vs K3LK4K40BM-BGCN)
- Single-package 12 GB density (vs K3LK2K20CM-JFCP)
- Active lifecycle with wide distributor stock (vs K3LKCKC0BM-MGCP)
Design Notes
At 6400 Mbps, LPDDR5 point-to-point routing demands strict length matching (typically within a few mils per byte lane), solid reference planes, and controlled impedance. Minimize stubs, avoid via transitions in data groups, and follow Samsung's package layout guideline for the FBGA-496 footprint. Simulate eye diagrams at the target data rate before committing the PCB stackup; on-die termination settings in the controller should be tuned against measured channel loss.
Provide separate, tightly-regulated 1.05 V core and LPDDR5 VDDQ rails with correct power-up sequencing per the Samsung datasheet. Estimated: at full 6400 Mbps read bursts, dynamic current scales with VDDQ squared, so rail accuracy directly affects both timing margin and power. Use a PMIC with dedicated LPDDR5 rails and verify deep-sleep entry/exit current behavior in system, since idle power dominates battery-life models in mobile designs.
Do not substitute suffix variants (CM-BGCP vs BM-BGCN vs JFCP) without verifying ball count and speed binning - Samsung's K3LK codes encode package and performance class, and visually similar parts are frequently mismatched in broker channels. Source from authorized distributors with date-code and authenticity checks, and confirm the LPDDR5 JEDEC command-set support of your memory controller before layout, since LPDDR4 controllers are not compatible.
Compliance Information
Compliance declarations are not published in the provided distributor listings; obtain RoHS/REACH certificates from Samsung Semiconductor or the authorized distributor.
