K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung
Référence : K6F1616U6A-EF55T ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K6F1616U6A-EF55T Présentation
An asynchronous SRAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit and does not require a clock signal or periodic refresh, unlike DRAM. Within the memory IC hierarchy, static RAM sits alongside DRAM and non-volatile memory as a parallel-interface memory class, favored where deterministic, low-latency read and write cycles matter more than raw density. Because there is no refresh circuitry, controller design is simplified to standard address, data, and chip-enable strobes.
Key features of the K6F1616U6A family include super-low-power full-CMOS construction, a wide 2.7V to 3.3V operating range suited to battery-powered systems, a parallel 16-bit wide data bus, and a compact 48-TFBGA footprint that conserves board area versus legacy TSOP SRAM packages. The 55ns speed grade supports zero-wait-state access from mid-range microcontrollers and DSPs.
Technically, the device uses a six-transistor full-CMOS memory cell, which yields near-zero static current in standby when deselected and eliminates refresh overhead entirely. Data is retained as long as supply voltage remains in range, and access is controlled via chip enable, output enable, and write enable signals in a conventional asynchronous SRAM timing scheme.
Typical applications include battery-powered portable instrumentation, industrial control panels requiring code or data scratchpad memory, network equipment line-card buffers, and legacy embedded designs replacing older SRAM generations such as the K6X0808/K6X1008 families.
Design consideration: use 55ns access timing conservatively - add address-valid setup margin in controller timing loops, and keep the TFBGA land pattern per the datasheet ball map since ball-grid escape routing constrains trace length matching.
This page synthesizes distributor availability data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with pricing freshness as of 2026-09-01.
Alternatives de remplacement direct pour K6F1616U6A-EF55T — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K6F1616U6A-EF55T (même facteur de forme et même empreinte) — différant par Memory Size, Organization, Package, Refresh Requirement.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K6F1616U6A-EF55
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K6F1616U6A-EF55T Valeurs maximales et caractéristiques électriques
| Type de mémoire | SRAM - Asynchronous |
| Taille de mémoire | 16 Mbit |
| Organisation de la mémoire | 1M x 16 |
| Interface | Parallel |
| Access Time | 55 ns |
| Supply Voltage Range | 2.7 V to 3.3 V |
| Technology | Full CMOS Static RAM |
| Boîtier | 48-TFBGA (7.5 x 9.5 mm) |
| Type de montage | Surface Mount |
| Packaging | Tape & Reel (T suffix) |
| Clock Frequency | N/A (asynchronous, no clock required) |
| Refresh Requirement | None (static RAM) |
Guide de configuration des broches du K6F1616U6A-EF55T 48-tfbga (7.5 x 9.5 mm)
Configuration des broches du K6F1616U6A-EF55T (boîtier 48-tfbga (7.5 x 9.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K6F1616U6A-EF55T.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K6F1616U6A-EF55T convient pour 6 applications: Battery-Powered Portable Instrumentation, Industrial Control and PLC Data Buffers, Legacy SRAM Replacement in Embedded Designs, Networking Line-Card Buffer Memory, Medical and Test Instrumentation Data Storage, FPGA Reference Design Scratchpad.
Battery-Powered Portable Instrumentation
The K6F1616U6A-EF55T is a strong fit for battery-powered instruments because Samsung designs the K6F1616U6A family as a super-low-power, low-voltage full-CMOS static RAM operating from 2.7V to 3.3V - directly compatible with a 3.0V lithium cell or 3.3V rail without a regulator stage. Its asynchronous architecture needs no clock or refresh, so a microcontroller can clock-gate the bus and drop the part into standby simply by deselecting chip enable. The 1M x16 organization supplies 2MB of fast scratchpad or data-logging memory with deterministic 55ns access. The 48-TFBGA (7.5 x 9.5 mm) footprint keeps handheld and portable PCBs compact.
Recommandé
Industrial Control and PLC Data Buffers
In PLCs, motor control panels, and factory automation controllers, the K6F1616U6A-EF55T provides 2MB of deterministic, zero-refresh working memory between the microprocessor and process I/O. The 55ns access time supports zero or single wait-state operation from industrial-grade MCUs and FPGAs, while the parallel 16-bit bus lets controllers move logged events and setpoint tables efficiently. Full-CMOS cells tolerate the wide temperature swings typical of factory floors without refresh-related data loss risk, and the wide 2.7V to 3.3V input range rides through supply sag on 3.3V industrial logic rails.
Recommandé
Legacy SRAM Replacement in Embedded Designs
Many legacy embedded designs were built around Samsung's K6X0808/K6X1008 TSOP SRAM families or other 16Mbit-class asynchronous SRAMs that are now in constrained supply. The K6F1616U6A-EF55T provides the same asynchronous, no-refresh interface paradigm in a modern low-voltage full-CMOS die, letting designers extend product life with a parameter-matched 1M x16, 55ns device. Migration typically requires only address/data remapping to the 48-TFBGA ball map and verification that the host tolerates the 2.7V to 3.3V range, since some older TSOP parts ran at 4.5V to 5.5V.
Recommandé
Networking Line-Card Buffer Memory
Network equipment such as switches, routers, and DSLAM line cards uses asynchronous SRAM for statistics counters, queuing tables, and control-plane buffers. The K6F1616U6A-EF55T's 55ns access and 1M x16 organization suit 16-bit-wide counter and descriptor tables that must be read-modify-written quickly without the added controller complexity of synchronous SRAM pipelines. The 2.7V to 3.3V supply integrates with standard 3.3V backplane logic, and the compact 48-TFBGA (7.5 x 9.5 mm) ball-grid array allows dense placement under BGA network processors where TSOP height and clearance are limited.
Recommandé
Medical and Test Instrumentation Data Storage
Portable medical monitors and bench instruments require volatile working memory with deterministic timing for waveform capture, calibration tables, and sensor buffering. The K6F1616U6A-EF55T delivers 2MB of 55ns asynchronous storage with no refresh cycles, so a real-time loop is never stalled by memory housekeeping - an important factor in sampling systems with hard deadlines. Its full-CMOS construction minimizes average current draw in battery or patient-worn devices, and the low 2.7V floor allows operation from a single 3.0V cell through discharge, simplifying the power tree versus 5V-class legacy SRAM.
Recommandé
FPGA Reference Design Scratchpad
FPGA-based systems frequently attach external asynchronous SRAM as a scratchpad for soft-processor heaps, video line buffers, or DSP working arrays. The K6F1616U6A-EF55T's parallel 16-bit asynchronous interface maps directly onto a simple FPGA memory controller built from chip enable, output enable, and write enable strobes - no clock-domain logic or refresh sequencer is required. At 55ns, a 50MHz FPGA fabric can complete one access every few cycles without wait-state gymnastics. The 48-TFBGA footprint sits cleanly beside BGA-packaged FPGAs such as the Microsemi families used in industrial and aerospace boards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K6F1616U6A-EF55T — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K6F1616U6A-EF55 |
|---|---|---|
| Package | 48-TFBGA (7.5 x 9.5 mm) | 48-TFBGA (7.5 x 9.5 mm) - same |
| Brand | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Mbit | 16 Mbit |
| Organization | 1M x 16 | 1M x 16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 2.7 V to 3.3 V | 2.7 V to 3.3 V |
| Packaging / Delivery | Tape & Reel (T suffix) | Tray |
Principaux différenciateurs
- Fastest speed grade in the family (vs K6F2016U4E-EF70T)
- Compact ball-grid footprint (vs K6X0808C1D-GF55T)
- Supply-chain flexibility via tray variant (vs K6F1616U6A-EF55)
Notes de conception
At the 55ns access grade, bus timing is the dominant risk. Budget the full address-valid-to-data-valid delay plus output-enable access time and host setup/hold margins; avoid assuming 55ns end-to-end. Keep TFBGA escape traces under 50mm and route address/data as a loosely length-matched group. Add 0.1uF plus 10uF ceramic decoupling within 2mm of the VDD/GND ball pair, and series-terminate address lines longer than 80mm to control ringing on 3.3V CMOS edges.
The 48-TFBGA (7.5 x 9.5 mm) ball map requires a dedicated land pattern; do not reuse TSOP or other BGA footprints. Follow the Samsung datasheet land-pattern appendix for pad diameter and mask openings, and fan out with via-in-pad or dog-bone escapes as board thickness dictates. Verify the ball map directly against the official datasheet ball assignment table before release - distributor summaries do not carry per-ball detail, and pinout accuracy must come from the manufacturer document.
Estimated: an asynchronous full-CMOS SRAM at this density draws negligible average power in standby (device deselected); the main consumption occurs during access cycles. Size the 3.3V rail using the datasheet operating current at your actual cycle rate rather than worst-case datasheet maxima, and confirm exact standby/operating microamp values from the Samsung K6F1616U6A datasheet DC table, as precise values were not published in the retrieved distributor data.
Informations de conformité
Compliance data was not included in the retrieved distributor summaries. Verify RoHS/REACH status on the Samsung Semiconductor official product page or the distributor environmental data sheet before procurement.
