MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron
Référence : MT40A1G16KNR-075-IT-E ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $81.28 | $81,28 |
| 10 | $76.5 | $765,00 |
| 100 | $68.2 | $6 820,00 |
| 500 | $62.4 | $31 200,00 |
| 1 000 | $55.8 | $55 800,00 |
MT40A1G16KNR-075-IT-E Présentation
A DDR4 SDRAM is a synchronous dynamic random-access memory that quadruples the data rate of DDR3 by transferring data on both clock edges and using a pseudo-open-drain SSTL_12 I/O standard with on-die termination. As a member of the broader DRAM family, DDR4 SDRAM occupies the mainstream volatile main-memory segment used in servers, workstations, embedded computing platforms, and high-end networking gear, sitting between the LPDDR/low-power DRAM family (mobile) and HBM (high-bandwidth, high-end accelerators) in the JEDEC memory taxonomy.
Key features include a 1.07 GHz / 1.33 GHz maximum clock frequency per Micron product pages, 19 ns CAS latency timing budget, on-die temperature sensor with automatic self-refresh, ZQ calibration for output-driver impedance trimming, and a programmable MR (mode-register) interface that supports fine-grained timing, refresh, and voltage tuning. The IT industrial temperature grade spans 0 °C to +95 °C (this is the E-grade base temperature; see validation for the IT industrial note), and the device is JEDEC JESD79-4 DDR4 compliant.
Architecturally, the die uses Micron's 20 nm-class DRAM process and integrates 8 internal banks with bank-grouping for improved throughput. The 16-bit data interface and ×16 organization make the part well suited for high-bandwidth applications where parallel channels are limited, such as AI accelerator boot memory and FPGA-attached DRAM buffers.
Typical applications include AI server boot memory, BMC/management-controller DRAM, storage-controller cache (SAS/NVMe RAID HBAs), embedded computing modules, FPGA SoC attached memory, and service-spare DDR4 inventory for hyperscaler maintenance.
When designing with this part, observe the PCB routing rules in Micron's TN-40-series application notes: maintain 90 Ω differential impedance on the DQ/DQS pairs, length-match the byte lane within ±25 ps, and provide a clean 2.5 V VPP rail with at least 10 µF of decoupling near each device.
This page synthesizes distributor pricing, drop-in same-package and cross-brand alternatives, and PCB design guidance not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MT40A1G16KNR-075-IT-E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A1G16KNR-075-IT-E (même facteur de forme et même empreinte) — différant par Memory Type, Operating Temperature, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A1G16KNR-075-E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G16KNR-062E:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G16KNR-075:E TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G16HNR-075E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G8WE-075E IT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A8G165WB-BCRC
✅ Remplacement direct✓ En stock
$12.57 / unité
Voir la fiche technique →H5AN8G6NCJ-XNC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A1G16KNR-075-IT-E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM (Volatile) |
| Density | 16 Gbit (2 GB) |
| Organisation de la mémoire | 1G × 16 |
| Speed Grade | -075 (DDR4-2666, 2666 MT/s) |
| Fréquence d'horloge maximale | 1.33 GHz |
| CAS Latency Timing | 19 ns (CL19) |
| Supply Voltage VDD | 1.2 V nominal (1.14 V–1.26 V) |
| Supply Voltage VDDQ | 1.2 V |
| Word VPP | 2.5 V |
| Température de fonctionnement | 0 °C to +95 °C (Industrial) |
| Boîtier | 96-ball FBGA (7.5 mm × 13.5 mm × 1.1 mm) |
| Type de montage | Surface Mount |
| Memory Architecture | Dual-Die Package (DDP) |
| JEDEC Standard | JESD79-4 (DDR4) |
| Statut RoHS | Compliant |
Guide de configuration des broches du MT40A1G16KNR-075-IT-E 96-ball fbga (7.5 mm × 13.5 mm × 1.1 mm)
Configuration des broches du MT40A1G16KNR-075-IT-E (boîtier 96-ball fbga (7.5 mm × 13.5 mm × 1.1 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT40A1G16KNR-075-IT-E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A1G16KNR-075-IT-E convient pour 6 applications: AI Server Boot Memory, BMC and Management-Controller DRAM, Storage-Controller Cache Memory, FPGA-Attached DRAM Buffer, Embedded Computing Modules, Service-Spare DDR4 Inventory for Hyperscalers.
AI Server Boot Memory
The MT40A1G16KNR-075-IT-E fits AI server boot-memory designs because its 16-Gbit × 16 DDR4-2666 interface delivers 2666 MT/s per pin with a 19 ns CAS-latency budget, which is sufficient to load firmware images for BMC and management CPUs at sub-second boot times. The 1.2 V VDDQ plus 2.5 V VPP supply rails are standard for any server motherboard already designed to JEDEC JESD79-4 DDR4 specifications, so the part can be placed on the same voltage rails as the main DIMMs. Compared with higher-density LPDDR4 parts, DDR4 boot memory remains compatible with the wider legacy of x86 server BMCs that lack LPDDR4 PHY support. The 96-FBGA 7.5 mm × 13.5 mm footprint is also small enough to fit next to an SoC without expanding the keep-out zone.
Recommandé
BMC and Management-Controller DRAM
The MT40A1G16KNR-075-IT-E is well suited to baseboard management controller (BMC) DRAM because its 16-Gbit × 16 density provides ample headroom for IPMI message queues, sensor logs, and firmware scratch memory without crowding the BMC SoC. The industrial 0 °C to +95 °C temperature grade ensures operation across typical server chassis intake temperatures. The 1.2 V VDDQ rail aligns with the AST2500/AST2600-class BMC reference designs, allowing designers to reuse their existing DDR4 power tree. The 96-FBGA footprint supports tight routing to the BMC's ×16 memory controller, keeping the SI budget compliant with Micron TN-40-series routing guidelines.
Recommandé
Storage-Controller Cache Memory
The MT40A1G16KNR-075-IT-E delivers 16 Gbit of DDR4-2666 in a ×16 channel, which doubles the read-cache capacity available to a typical SAS/NVMe RAID HBA without increasing the number of ranks on the board. Its 1.33 GHz maximum frequency keeps the controller's DMA engine well-fed for flash-cache lookups at the 8 GT/s PCIe Gen4 line rates that dominate the storage market. The 96-FBGA package offers a small, well-shielded footprint that fits beside a PCIe-switch ASIC without violating its keep-out area. The 1.2 V/2.5 V supply pairing matches standard HBA voltage regulators, eliminating the need for additional power-rail sequencing.
Recommandé
FPGA-Attached DRAM Buffer
The MT40A1G16KNR-075-IT-E serves FPGA-attached DRAM buffer roles in which an external memory controller on a Xilinx or Altera FPGA needs a single 16-Gbit × 16 channel to hold large packet buffers or signal-processing windows. The DDR4-2666 bandwidth of 21.3 GB/s per channel is sufficient for 100 GbE MAC-to-FPGA pipelines and for RF digital-down-converter sample storage. The 96-FBGA ball grid simplifies PCB routing to the FPGA's ×16 memory controller banks, and the 1.2 V VDDQ rail can be supplied directly from the FPGA's on-board DDR4 regulator. The industrial 0 °C to +95 °C range supports outdoor or industrial enclosure deployments.
Recommandé
Embedded Computing Modules
The MT40A1G16KNR-075-IT-E is well suited to embedded computing modules that need a moderate amount of high-bandwidth DDR4 in a small footprint, such as COM-HPC or SMARC modules. Its 16-Gbit × 16 density gives 2 GB of working memory in a single chip, leaving room for a second chip for ECC support if required. The 96-FBGA 7.5 mm × 13.5 mm footprint is small enough to fit on a credit-card-sized module carrier alongside the SoC. Industrial 0 °C to +95 °C support covers the operating range of most industrial PC enclosures without derating.
Recommandé
Service-Spare DDR4 Inventory for Hyperscalers
The MT40A1G16KNR-075-IT-E is a prime candidate for service-spare inventory at hyperscaler data centers because it provides an exact controlled line item for field-replaceable boot DRAM and BMC caches. Its dual-die-package stack makes it functionally identical to two 8-Gbit ranks from the same Micron die family, simplifying multi-source qualification strategies. The 96-FBGA footprint is shared with several Micron 16-Gbit × 16 SKUs, allowing maintenance technicians to handle a single BOM with multiple valid part numbers. Because the part is currently flagged obsolete on Micron's catalog, the IT-E variant remains a preferred SKU for service continuity through end-of-life support windows.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A1G16KNR-075-IT-E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A1G16KNR-075-E | MT40A1G16KNR-062E:E | MT40A1G16HNR-075E | MT40A1G8WE-075E IT:B | K4A8G165WB-BCRC | H5AN8G6NCJ-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA (7.5x13.5) - same | 96-FBGA - same | 96-FBGA - same |
| Brand | Micron Technology | Micron Technology - same | Micron Technology - same | Micron Technology - same | Micron Technology - same | Samsung Electronics - cross-brand | SK Hynix - cross-brand |
| Density | 16 Gbit (2 GB) | 16 Gbit | 16 Gbit | 16 Gbit | 8 Gbit (half density) | 16 Gbit | 16 Gbit |
| Organization | 1G × 16 | 1G × 16 | 1G × 16 | 1G × 16 | 1G × 8 (×16 mode-configurable) | 1G × 16 | 1G × 16 |
| Speed Grade | -075 (DDR4-2666) | -075 (DDR4-2666) | -062 (DDR4-2400, slower) | -075 (DDR4-2666) | -075 (DDR4-2666) | DDR4-2666 | DDR4-2666 |
| VDD/VDDQ Supply | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0 °C to +95 °C (Industrial IT) | 0 °C to +85 °C (Commercial) | 0 °C to +95 °C | 0 °C to +95 °C | -40 °C to +95 °C (IT:B) | 0 °C to +95 °C | 0 °C to +95 °C |
| Lifecycle Status | Obsolete (per Micron catalog) | Obsolete | Active / NRND | Active | Active | Active (Samsung) | Active (SK Hynix) |
Principaux différenciateurs
- Industrial temperature grade with identical speed bin (vs MT40A1G16KNR-075-E)
- Faster -075 speed bin versus slower -062 bin (vs MT40A1G16KNR-062E:E)
- Higher density per chip than half-density Micron part (vs MT40A1G8WE-075E IT:B)
Notes de conception
PCB layout for DDR4 × 16 requires 90 Ω differential impedance on every DQ/DQS pair, with each byte lane length-matched to within ±25 ps according to Micron TN-40-series application notes. Place a minimum of one 10 µF X7R decoupling capacitor per device on the VPP 2.5 V rail, located within 5 mm of the BGA. Route VDD and VDDQ with at least 4 vias per supply pin pair to suppress AC impedance peaks.
Estimated: at 1.26 V VDDQ, 312 mA typical current, and 2666 MT/s data rate, the device dissipates roughly 0.39 W. With 96-FBGA package theta_JA of approximately 30 °C/W, junction temperature rise is about 11.7 °C above ambient - no inline heatsink required. Designers should still leave 4-6 thermal vias under the package center ball array to conduct heat into an inner ground plane for derated operating conditions.
Maintain 90 Ω differential impedance for DQ/DQS pairs and 50 Ω single-ended impedance for CA, CK_t, and CK_c signals. Avoid via stub lengths exceeding 100 mil on inner layers; use back-drilled vias if a thicker stack-up is required. Reference plane stitching vias should be placed every 200 mil along the DDR4 routing channel to maintain a continuous return path and minimize crosstalk.
Informations de conformité
RoHS compliant per Worldway Electronics and DigiKey listings. REACH, halogen-free, and conflict-mineral status not documented on verified sources; confirm against Micron material declaration. AEC-Q100 not applicable for industrial temperature grade; AEC-Q100 qualified automotive DDR4 parts would be required for automotive deployments.
