MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron
Référence : MT40A2G8AG-062E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $13.2 | $132,00 |
| 100 | $11.9 | $1 190,00 |
| 500 | $10.8 | $5 400,00 |
| 1 000 | $9.75 | $9 750,00 |
MT40A2G8AG-062E Présentation
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, an evolution of DDR3 that lowers operating voltage to 1.2V, doubles bank groups to eight banks per group, and adds features such as Bank Group Architecture, DBI (data bus inversion), CA parity, and VPP (2.5V wordline boost supply). In the memory hierarchy, this component sits as a discrete DRAM die used to populate server DIMMs, memory-down embedded designs, and networking line cards, forming the main-memory tier below CPU caches in a computer or embedded system.
Key features include 16Gbit density in a single die, x8 organization with eight internal banks, DDR4-3200 speed grade (-062E means tCK = 0.625 ns), POD12 I/O interface for lower switching power, and on-die termination (ODT). The AG die revision is the current-generation product replacing the earlier SA-die MT40A2G8SA variants, offering improved refresh and reliability parameters.
The device uses Micron's advanced DRAM process with 8n-bank, four bank-group architecture, enabling high sustained bandwidth. It supports activation-to-activation command spacing (tRRD_S/tRRD_L), write CRC for data integrity, and programmable CAS latency up to CL22. Operating temperature ranges vary by suffix: AUT (automotive), AIT (industrial), and AAT (automotive application) grades are available, with commercial -062E:F variants for standard use.
Typical applications include embedded systems, networking and telecom equipment, industrial controllers, server memory modules, and consumer electronics that require high-bandwidth main memory in a memory-down configuration.
Design considerations: DDR4 routing requires length-matched, impedance-controlled fly-by or point-to-point topology; the POD12 interface requires VDDQ = 1.2V and VPP = 2.5V supplies with proper decoupling. Follow Micron's DDR4 layout guidelines for address/command tree routing and ODT calibration (ZQ pin).
This page synthesizes distributor pricing, drop-in alternatives including the Alliance Memory second-source, and practical design notes not found in the manufacturer datasheet. Prices as of 2026-09-04.
Alternatives de remplacement direct pour MT40A2G8AG-062E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A2G8AG-062E (même facteur de forme et même empreinte) — différant par Package, RoHS Status, Organization, Density, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A2G8AG-062E AAT:F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A2G8AG-062E AIT:F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A2G8SA-062E:F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A2G8AG-062E:F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4AAG085WM-BCWE
✅ Remplacement direct✓ En stock
$7 / unité
Voir la fiche technique →MT40A2G8AG-062E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 16 Gbit |
| Organisation de la mémoire | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) |
| Clock Frequency | 1600 MHz |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) |
| Latence CAS | CL22 (DDR4-3200) |
| Access Time | 19 ns |
| Supply Voltage VDD | 1.2 V |
| I/O Interface | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | 2.5 V |
| Number of Banks | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) |
| Boîtier | 78-FBGA (7.5 x 11 mm) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Die Revision | AG (current generation) |
Guide de configuration des broches du MT40A2G8AG-062E 78-fbga (7.5 x 11 mm)
Configuration des broches du MT40A2G8AG-062E (boîtier 78-fbga (7.5 x 11 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT40A2G8AG-062E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A2G8AG-062E convient pour 6 applications: Embedded Systems Main Memory, Networking and Telecom Equipment, Server Memory Modules (RDIMM/LRDIMM), Industrial Controllers and Automation, Automotive Infotainment and ADAS, Test and Measurement Instrumentation.
Embedded Systems Main Memory
The MT40A2G8AG-062E provides 16Gb of DDR4 main memory in a memory-down configuration for embedded processors such as ARM-based SoCs and industrial compute modules. Its 2G x 8 organization lets designers place two ICs for a 64-bit bus with ECC, or four for a 32-bit bus, at the DDR4-3200 data rate with tCK = 0.625 ns. The compact 78-FBGA (7.5 x 11 mm) footprint fits dense layouts where SODIMM sockets are impractical. Because the POD12 interface operates at 1.2V, dynamic memory power is minimized for fanless enclosures. Place devices close to the host controller with length-matched fly-by routing and ODT calibration via the ZQ resistor for reliable signal integrity.
Recommandé
Networking and Telecom Equipment
Routers, switches, and telecom line cards require high-bandwidth packet buffering and deep flow tables, which the MT40A2G8AG-062E supplies with its DDR4-3200 data rate and 4-bank-group architecture delivering high sustained bandwidth. The 16Gb density in x8 organization allows scalable buffering pools, and the AIT industrial grade extends operating temperature for outdoor and central-office equipment. POD12 I/O with on-die termination (ODT) reduces the external termination network, cutting BOM cost on high-density boards. Designers typically pair this DRAM with network processors or FPGA-based forwarding engines; ensure CA parity is enabled for link integrity in long-uptime deployments.
Recommandé
Server Memory Modules (RDIMM/LRDIMM)
The MT40A2G8AG-062E is a standard building block for server RDIMMs and memory-down server boards, where x8 organization is mandatory for ECC (one bit per IC, SECDED corrected by the controller). Eighteen ICs populate a 32GB dual-rank RDIMM at DDR4-3200 with CL22 timing. Bank Group Architecture sustains bandwidth across ranks, write CRC protects data on long stubs, and CA parity guards command integrity on registered modules. The AG die revision meets current server qualification requirements, replacing the retired SA die. Thermal design matters at 16 ICs per module: spread devices along the PCB and couple the FBGA lid to a heat spreader for airflow-based cooling.
Recommandé
Industrial Controllers and Automation
Industrial PCs, motion controllers, and vision systems use the MT40A2G8AG-062E AIT grade for vibration-tolerant, wide-temperature main memory in memory-down layouts. The 78-FBGA package survives thermal cycling better than socketed DIMMs, and the -062E speed grade (DDR4-3200) provides headroom for real-time image buffering and protocol stacks. POD12 operation reduces wasted termination power inside sealed enclosures with passive cooling. Designers should qualify the board across the full industrial temperature range, account for DRAM refresh scheduling in deterministic-control software, and use the ZQ calibration resistor close to the device. The AG die improves refresh parameters over the earlier SA-die generation.
Recommandé
Automotive Infotainment and ADAS
The AUT:F automotive grade of the MT40A2G8AG die serves infotainment head units, digital clusters, and ADAS sensor-fusion platforms requiring multi-gigabyte frame buffers and map data. Automotive memory controllers run DDR4-3200 in point-to-point or two-load topologies; the 2G x 8 organization scales from 2GB (one IC, 32-bit bus, x16 controller modes) to larger pools. The 1.2V POD12 interface minimizes heat in dash-constrained enclosures, while the AUT grade is validated to automotive qualification requirements. Layout must follow fly-by termination rules and account for cabin-temperature derating; DRAM self-refresh retention during ignition-off states should be verified with the SoC vendor's power-management design guide.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep acquisition memory to capture long record lengths, and the MT40A2G8AG-062E delivers 16Gb per device at DDR4-3200. Instruments often place 4-8 DRAMs in parallel to build tens of gigabytes of capture buffer, using the x8 organization with controller-side ECC to guarantee sample integrity during long captures. The compact 78-FBGA permits high channel-count layouts near acquisition ASICs or FPGAs. Bandwidth-hungry streaming architectures benefit from interleaving across bank groups; designers should simulate multi-load DDR4 topology and confirm tDQSCK skew across devices when interleaving capture streams at full data rate.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A2G8AG-062E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A2G8AG-062E AAT:F | MT40A2G8SA-062E:F | MT40A2G8AG-062E:F | K4AAG085WM-BCWE |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Package | 78-FBGA (7.5 x 11 mm) | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA - verify ballout |
| Density / Organization | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s (1600 MHz) | 3200 MT/s |
| Supply Voltage | 1.2 V (POD12) | 1.2 V (POD12) | 1.2 V (POD12) | 1.2 V | 1.2 V |
| Lifecycle Status | Active | Active | Obsolete / EOL | Active | Active |
Principaux différenciateurs
- Current-generation AG die with active lifecycle (vs MT40A2G8SA-062E:F)
- Guaranteed second source with identical die (vs MT40A2G8AG-062E:F (Alliance Memory))
- x8 organization enables DBI and ECC (vs MT40A512M16GE-083E (x16))
Notes de conception
DDR4-3200 routing at tCK = 0.625 ns requires controlled-impedance fly-by topology for address/command (with 40-ohm on-die termination setting via MRS) and length-matched point-to-point data groups. Keep DQ/DQS/DM traces length-matched within +/-25 mils per inch of propagation and route over a solid reference plane. Follow Micron's DDR4 layout and SI application guidelines for multi-rank topologies, including write-leveling calibration on x8 devices. Simulate the full topology in SI tools before tape-out - at 3200 MT/s, stub lengths over 100 mils on data lines can close the eye.
Provide three supply rails: VDD/VDDQ at 1.2V (POD12), VPP at 2.5V, and VREFCA derived from a precision divider or regulator per the DDR4 specification. Estimated: a single 16Gb x8 device at DDR4-3200 draws roughly 400-700 mA peak on VDDQ depending on utilization - size the 1.2V rail per IC count and add bulk capacitance (e.g., 22uF ceramic per device plus 100uF bulk per bus) with local 0.1uF decoupling at each ball pair for VDD and VDDQ.
The 78-FBGA (7.5 x 11 mm, 0.8 mm ball pitch) requires a fanout-friendly pad design; use via-in-pad or dog-bone fanout on 0.8 mm pitch without violating IPC-based drill/wire rules of your fabricator. Place the ZQ calibration resistor (240 ohm 1%) within 10 mm of the ZQ ball with a short, low-inductance return. For thermal management in multi-IC memory-down stacks, add thermal vias under the package center to internal copper planes and consider lid-to-chassis coupling on server boards.
Common mistakes when converting from the obsolete MT40A2G8SA-062E to this AG part: forgetting to update controller timing tables (AG die refresh and tFAW parameters differ slightly), and using commercial-grade software timing in automotive AUT platforms. Also verify VPP (2.5V) is actually populated on legacy DDR3-based boards - DDR3 boards lack VPP and will not operate DDR4. Always re-run controller memory-training after any die-conversion to validate read/write margins.
Informations de conformité
RoHS compliance per distributor listings. AUT grade is qualified to Micron's automotive product-grade requirements (AEC-Q100-equivalent Q-100 grade depends on suffix - verify with Micron for your exact suffix).
