H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix
Référence : H5ANAG8NBJR-VKC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.4 | $114,00 |
| 100 | $10.2 | $1 020,00 |
| 500 | $9.3 | $4 650,00 |
| 1 000 | $8.6 | $8 600,00 |
H5ANAG8NBJR-VKC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, occupying the middle of the memory hierarchy between LPDRAM mobile variants and HBM high-bandwidth memory. It transfers data on both clock edges at up to 2666 Mbps per pin for this speed bin, making it the standard main-memory technology for servers, PCs, and embedded controllers.
Key features include 16Gb density in a single x8 organization, auto self-refresh, data mask, dynamic on-chip termination (ODT), asynchronous reset, ZQ calibration, write leveling, CRC, and auto precharge functions. These features reduce board-level termination cost, improve signal integrity at 2666 Mbps, and simplify controller bring-up.
The device uses SK Hynix CMOS DRAM process technology with bank-group architecture enabling fine-grained interleaving for high effective bandwidth. The 78-ball FBGA surface-mount package minimizes parasitic inductance, which is essential for maintaining eye margins at DDR4 speeds on a fly-by termination topology.
Typical applications include industrial controller main memory, embedded computing modules, network appliances, and replacement sourcing for legacy DDR4 designs requiring the x8 organization and 16Gb density.
Design consideration: DDR4 requires precision fly-by routing with per-byte termination; verify controller supports 16Gb x8 dual-rank configurations and initialize ZQ calibration at every power-up.
This page synthesizes distributor stock data, drop-in alternatives across SK Hynix, Micron and Samsung footprints, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour H5ANAG8NBJR-VKC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5ANAG8NBJR-VKC (même facteur de forme et même empreinte) — différant par Package, RoHS Status, Data Rate, Interface, Bank Group Architecture.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5ANAG8NBJR-RDC
✅ Remplacement direct✓ En stock
$3.55 / unité
Voir la fiche technique →H5ANAG8NBJR-PBC
✅ Remplacement direct✓ En stock
$31.5 / unité
Voir la fiche technique →H5ANAG8NMJR-VKC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5ANAG8NCJR-VKC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A2G8AG-062E
✅ Remplacement direct✓ En stock
$9.75 / unité
Voir la fiche technique →K4AAG085WM-BCWE
✅ Remplacement direct✓ En stock
$7 / unité
Voir la fiche technique →K4AAG085WM-BCTD
✅ Remplacement direct✓ En stock
$9.95 / unité
Voir la fiche technique →H5ANAG8NBJR-VKC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 16 Gbit |
| Organisation de la mémoire | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) |
| Tension d'alimentation | 1.14 V to 1.26 V (VDDQ) |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) |
| Température de fonctionnement | 0C to +85C |
| Boîtier | FBGA-78 |
| Type de montage | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | Yes |
| Data Mask Function | Yes |
| Dynamic On-Chip Termination | Yes |
| Asynchronous Reset | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Auto Precharge | Yes |
| Statut RoHS | Compliant, Lead-Free and Halogen-Free |
Guide de configuration des broches du H5ANAG8NBJR-VKC fbga-78
Configuration des broches du H5ANAG8NBJR-VKC (boîtier fbga-78). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5ANAG8NBJR-VKC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5ANAG8NBJR-VKC convient pour 6 applications: Industrial Controller Main Memory, Embedded Computing Modules, Network Appliance Packet Buffering, Legacy DDR4 Replacement Sourcing, Test and Measurement Instrumentation, Consumer and Display Electronics.
Industrial Controller Main Memory
The H5ANAG8NBJR-VKC's 16Gb (2Gx8) DDR4-2666 configuration provides the large, high-bandwidth working memory required by industrial PLCs, motion controllers, and edge gateways running Linux-based real-time stacks. Its 0C to +85C rating covers typical control-cabinet ambient conditions, while the 1.14V to 1.26V supply keeps total system power low compared with DDR3 at similar bandwidth. In a typical design, two or four devices attach to a fly-by routed command/address bus with dynamic on-chip termination absorbing reflections, eliminating discrete termination resistors and saving board area. The CRC and auto precharge features improve link reliability in electrically noisy factory environments. For extended-temperature deployments, pair with the industrial-temperature variant within the same H5ANAG8N family footprint.
Recommandé
Embedded Computing Modules
COM Express and SMARC compute modules commonly use soldered-down DDR4 components, and the H5ANAG8NBJR-VKC's 16Gb density in a 78-ball FBGA allows 2 GB or 4 GB of memory per module without SO-DIMM connectors. DDR4-2666 delivers 21.3 GB/s peak bandwidth per 64-bit channel, sufficient for machine-vision preprocessing and protocol conversion workloads. The write leveling and ZQ calibration functions let module vendors pass signal-integrity validation across PCB stackup variations, while asynchronous reset simplifies warm-restart behavior in headless embedded systems. Because DDR4 component ballouts are JEDEC-standardized, module designers can dual-source with Micron MT40A2G8AG-062E or Samsung K4AAG085WM parts on the same footprint, protecting supply continuity for long-lifetime embedded programs.
Recommandé
Network Appliance Packet Buffering
Enterprise switches, routers, and security appliances use DDR4 DRAM as deep packet buffers and flow tables, where the H5ANAG8NBJR-VKC's 2Gx8 organization and 2666 Mbps pin rate provide 2.6+ GB/s per device. Bank-group architecture enables short burst interleaving, keeping effective bandwidth high under the random access patterns typical of queue management. The dynamic ODT and CRC functions maintain timing margins on the heavily loaded multi-drop DDR4 buses found in networking line cards. Because buffer memory is frequently accessed, the listed ~30 mA operating current and low 1.2V domain reduce line-card thermal budget versus DDR3L alternatives of equal bandwidth. Scale capacity by populating multiple FBGA-78 devices on shared address/command trees within controller rank limits.
Recommandé
Legacy DDR4 Replacement Sourcing
Programs maintaining DDR4-based platforms face die-revision end-of-life events as SK Hynix transitions fab nodes, and the H5ANAG8NBJR-VKC family offers forward and backward substitution paths within an identical FBGA-78 footprint. Designs originally built on B-die (H5ANAG8NBJR) can move to C-die (H5ANAG8NCJR-VKC, with 31,550 pieces of distributor stock reported in July 2026) or M-die (H5ANAG8NMJR-VKC) without PCB changes, since the JEDEC ballout is unchanged. Engineering effort is limited to re-running memory-controller training and updating the validated die-revision list in firmware. Cross-brand fallback to Micron MT40A2G8AG-062E or Samsung K4AAG085WM extends supply resilience further while keeping the same land pattern.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture gigabytes of sample data, and the H5ANAG8NBJR-VKC's 16Gb x8 organization lets designers build deep capture memory with a compact DRAM array. DDR4-2666 provides sustained streaming bandwidth adequate for moving acquisition samples from front-end FPGAs into bulk storage, and the data mask function enables efficient partial writes into circular capture buffers without read-modify-write cycles. The 0C to +85C operating range matches benchtop instrument environments, and lead-free, halogen-free FBGA assembly meets standard electronics-manufacturing requirements. Multiple devices on a fly-by bus with on-chip termination simplify layout on dense multilayer acquisition boards, while asynchronous reset provides deterministic instrument power-cycle behavior.
Recommandé
Consumer and Display Electronics
Smart TVs, set-top boxes, and digital signage players use DDR4 DRAM for graphics frame buffers and application memory, and the H5ANAG8NBJR-VKC's 16Gb density supports 4K frame-buffer requirements (a 3840x2160 frame at 32 bpp is roughly 33 MB, so 16Gb provides generous multi-buffer headroom). DDR4-2666 bandwidth sustains smooth UI composition and video decode at low 1.2V power, extending thermal design margins in sealed fanless enclosures. The FBGA-78 package's small footprint allows memory placement close to the SoC, shortening fly-by routing stubs and improving eye margins. Consumer programs benefit from the JEDEC-standard footprint enabling cost-driven second sourcing with SK Hynix die-revision siblings or Micron/Samsung equivalents without PCB respin.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5ANAG8NBJR-VKC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5ANAG8NBJR-RDC | H5ANAG8NMJR-VKC | H5ANAG8NCJR-VKC | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same (JEDEC standard) | FBGA-78 - same (JEDEC standard) |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 | DDR4-2933 class (R suffix) | DDR4-2666 | DDR4-2666 | DDR4-2666 (-062) | DDR4-2666 class (W bin) |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.2 V nominal (DDR4 spec) | 1.2 V nominal (DDR4 spec) |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Feature Set (CRC/ODT/Write Leveling/ZQ) | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes |
| Die Revision | B die (ordering code B) | B die | M die (newer generation) | C die | Micron die (vendor specific) | Samsung die (vendor specific) |
Principaux différenciateurs
- DDR4-2666 speed bin in the B-die generation (vs H5ANAG8NBJR-PBC)
- Battle-tested die revision with broad controller validation (vs H5ANAG8NMJR-VKC)
- JEDEC-standardized footprint enables cross-brand second sourcing (vs MT40A2G8AG-062E)
Notes de conception
Route DDR4 command/address lines in a fly-by topology with series resistors at the controller and rely on the H5ANAG8NBJR-VKC's dynamic on-chip termination (ODT) rather than discrete termination. Keep DQS_t/DQS_c strobe pairs length-matched within the controller's spec (commonly +/-5 mil per inch rules apply to DQ vs DQS) and reference all DDR4 layers to a solid ground plane. At 2666 Mbps, any via stub in the DQ path degrades the eye; use back-drilling on boards thicker than ~1.6 mm.
Provide a dedicated 1.2V rail regulated to the 1.14V-1.26V window with separate bulk capacitance per device and 0.1uF/0.01uF ceramic decoupling at each VDD/VDDQ ball pair. Use the VTT termination rail (0.6V) sourced by a dedicated termination regulator with sensing at the far end of the fly-by bus. Estimated: at the listed ~30 mA operating current, one device draws roughly 36 mW from 1.2V, but system-level current during simultaneous multi-bank activation can exceed datasheet IDD averages, so size the rail on peak controller current budgets, not the per-device average.
Do not mix SK Hynix B-die (this part), C-die (H5ANAG8NCJR-VKC), and M-die (H5ANAG8NMJR-VKC) or cross-brand Micron/Samsung devices within one rank without re-running memory training; die revisions have different timing sets and training convergence behavior even though the footprint is identical. Always execute ZQ calibration after reset and at temperature excursions, and never omit the asynchronous RESET# assertion during power-up sequencing, or the device may enter an undefined state with elevated current.
Informations de conformité
JLCPCB and LCSC listings mark the family ROHS; SK Hynix family datasheet title cites Lead-Free & Halogen-Free (RoHS). REACH and conflict-minerals declarations not present in provided data.