MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix
Référence : MX30UF4G26AB ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.85 | $6,85 |
| 10 | $6.1 | $61,00 |
| 100 | $5.45 | $545,00 |
| 500 | $4.8 | $2 400,00 |
| 1 000 | $4.25 | $4 250,00 |
MX30UF4G26AB Présentation
SLC NAND Flash is a type of non-volatile memory that stores one bit per cell, delivering higher endurance (typically 60K-100K P/E cycles), faster write throughput, and lower bit error rates than MLC or TLC NAND. It sits within the broader hierarchy of NAND Flash -> non-volatile memory -> semiconductor memory -> integrated circuit, and is widely used where MLC/TLC endurance is insufficient but raw density must remain high.
Key features of the MX30UF4G26AB include 4Gbit (4,096 Mbit) density, single-level cell (SLC) architecture, 1.7V to 1.95V single supply operation, and a 16-bit parallel data bus. The device integrates an internal page buffer, ECC status flag and ONFI parameter page support, simplifying host firmware integration. Its 25 ns asynchronous access time delivers 40 MB/s sustained read throughput when paired with a properly designed controller.
The architecture combines a charge-trap floating-gate cell with ONFI-compatible command set, ECC-ready status reporting, and multi-plane page programming. Built-in hardware reset and write-protect pins add robustness against unexpected power transients during in-field programming.
Typical applications include industrial solid-state drives, factory automation controllers, networking line cards, automotive infotainment storage, and boot/loader code memory in set-top boxes. The 1.8V Vcc also makes it well suited for portable and battery-powered devices where energy efficiency matters.
When designing with this part, ensure the host controller supports ONFI 1.0 asynchronous NAND interface timing and that ECC strength (BCH or Hamming) matches the recommended bits-per-512-byte window.
This page synthesizes distributor pricing, drop-in alternatives, application examples, and engineering design notes that go beyond the manufacturer datasheet, helping procurement and design engineers make faster sourcing decisions.
Alternatives de remplacement direct pour MX30UF4G26AB — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MX30UF4G26AB (même facteur de forme et même empreinte) — différant par Interface, Package, Memory Type, Bus Width, MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MX30UF4G28AB
✅ Remplacement direct✓ En stock
$2.3 / unité
Voir la fiche technique →MX30UF4G16AB
✅ Remplacement direct✓ En stock
$2.55 / unité
Voir la fiche technique →MX30UF2G28AB
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MX30LF4G26AB
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MX30UF4G26AB Valeurs maximales et caractéristiques électriques
| Type de mémoire | FLASH - NAND (SLC) |
| Memory Density | 4 Gbit (512 MB) |
| Memory Organization | 256M x 16 |
| Supply Voltage (Vcc) | 1.7 V to 1.95 V |
| Interface | Parallel (Asynchronous NAND) |
| Access Time | 25 ns |
| Température de fonctionnement | -40 C to +85 C |
| Boîtier | 63-VFBGA (9 x 11 mm) |
| Type de montage | Surface Mount |
| Compliance Standard | ONFI 1.0 |
| Cell Technology | Single-Level Cell (SLC) |
| Niveau MSL | 3 |
| Statut RoHS | Compliant |
Configuration des broches de MX30UF4G26AB
| Broche A1 | VSS — Ground |
| Broche B1 | IO0 — Data I/O 0 |
| Broche C1 | IO1 — Data I/O 1 |
| Broche D1 | IO2 — Data I/O 2 |
| Broche E1 | IO3 — Data I/O 3 |
| Broche F1 | VSS — Ground |
| Broche G1 | IO4 — Data I/O 4 |
| Broche H1 | IO5 — Data I/O 5 |
| Broche J1 | IO6 — Data I/O 6 |
| Broche K1 | IO7 — Data I/O 7 |
| Broche A2 | VCC — Power supply (1.7V to 1.95V) |
| Broche B2 | CE# — Chip enable (active low) |
| Broche C2 | RE# — Read enable (active low) |
| Broche D2 | WE# — Write enable (active low) |
| Broche E2 | ALE — Address latch enable |
| Broche F2 | CLE — Command latch enable |
| Broche G2 | WP# — Write protect (active low) |
| Broche H2 | R/B# — Ready/Busy (open drain) |
| Broche J2 | VCC — Power supply |
| Broche K2 | VSS — Ground |
Applications typiques
MX30UF4G26AB convient pour 7 applications: Industrial Solid-State Storage, Networking Line Card Boot and Log Memory, Automotive Infotainment Storage, Portable and Battery-Powered Devices, Set-Top Box and Smart TV Code Storage, IoT Edge Device Data Logging, Industrial Printer and Scanner Firmware.
Industrial Solid-State Storage
The MX30UF4G26AB fits industrial solid-state storage applications that demand high endurance and a wide -40 C to +85 C temperature range. Its SLC architecture delivers typical 60K-100K P/E cycles per block, four to ten times the endurance of MLC NAND, which matters for factory automation controllers and ruggedized data loggers that rewrite storage continuously over multi-year deployments. With 4 Gbit (512 MB) usable capacity and 25 ns asynchronous page access, the device pairs with a BCH or Hamming ECC controller to provide reliable non-volatile memory without the cost of eMMC or SSD subsystems. Designers should budget 1.7 V to 1.95 V at the host rail, add 100 nF + 10 uF decoupling near the Vcc balls, and use ONFI 1.0 READ ID to confirm part identity during firmware initialization.
Recommandé
Networking Line Card Boot and Log Memory
In networking line cards and routers the MX30UF4G26AB serves as primary boot Flash alongside a host CPU and LPDDR. Its 1.8V supply matches the core rail of modern ARM-based networking SoCs, eliminating an extra LDO; the 16-bit parallel bus sustains roughly 40 MB/s read throughput at 25 ns, which is fast enough to decompress bootloader images in well under one second at line-card reset. ONFI 1.0 compatibility lets the same firmware image target multiple Macronix densities, simplifying BOM flexibility across SKUs. Designers should keep trace lengths matched within 50 mils on the 16-bit data bus to preserve setup/hold margins and tie R/B# to a GPIO interrupt on the host for command-complete signalling.
Recommandé
Automotive Infotainment Storage
The MX30UF4G26AB suits automotive infotainment applications such as head-unit firmware storage, navigation map caches, and rear-seat entertainment buffering. Its -40 C to +85 C industrial grade spans the cabin environment, and SLC NAND's low bit-error rate and fast write throughput outperform MLC NAND at small-block random writes typical of navigation tile updates. The 4 Gbit density is sufficient for map tiles covering a continent, while the 1.8V Vcc eases integration with low-power automotive SoCs from NXP and Renesas. Engineers should allocate BCH ECC with 8-bit correction per 512-byte sector and monitor block retirement counters to plan lifetime margin.
Recommandé
Portable and Battery-Powered Devices
For portable and battery-powered devices such as handheld scanners, e-readers, and wearable medical accessories, the MX30UF4G26AB offers a low 1.8V operating rail that minimizes active and standby power draw compared to 3.3V NAND. The 4 Gbit density holds firmware, user data, and logging buffers on a single chip, while the 63-ball VFBGA package occupies less than 100 mm^2 of board area - critical for compact form factors. ONFI 1.0 deep power-down support lets the host drop the part into microamp quiescent current when the device sleeps, extending battery life. Designers should add a power-good supervisor to sequence Vcc ramp before issuing commands to the asynchronous interface.
Recommandé
Set-Top Box and Smart TV Code Storage
Set-top boxes and smart TVs benefit from the MX30UF4G26AB as primary code-storage and channel-list retention memory, where 4 Gbit holds bootloader, kernel, root file system, and user preferences on one device. The 25 ns page access enables fast boot transitions, important for time-to-channel benchmarks in consumer electronics. SLC reliability reduces in-field failures compared to MLC parts in the same price band, and the 1.8V rail complements the power tree of modern STB SoCs. Designers should reserve one block for bad-block replacement and use the ONFI parameter page to detect device revision and feature set on first boot.
Recommandé
IoT Edge Device Data Logging
IoT edge devices such as smart meters, environmental monitors, and remote sensor hubs use the MX30UF4G26AB to log sensor readings between cloud synchronizations. Its 4 Gbit capacity supports months of buffered telemetry, and SLC endurance handles the high-frequency small-write workload typical of periodic sensor sampling. The 1.8V supply matches the LPDDR-style rails of low-power IoT SoCs from Realtek and MediaTek, while the wide operating temperature range covers outdoor and industrial deployments. Engineers should implement wear-levelling across all blocks and use the status-bit ECC report to forecast remaining device lifetime.
Recommandé
Industrial Printer and Scanner Firmware
The MX30UF4G26AB serves as firmware and font-storage memory in industrial label printers, barcode scanners, and multifunction office equipment where high write endurance and a wide temperature range matter. The 4 Gbit density holds multiple language fonts, printer drivers, and bitmap glyph caches without a separate file-system Flash. Parallel asynchronous access ensures low-latency response when the controller issues sudden page-fetch commands during print rasterization. Designers should add WP# hardware write protection during firmware update windows and verify ECC log bits at each boot to flag degrading blocks early.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MX30UF4G26AB — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MX30UF4G28AB | MX30UF4G16AB | MX30UF2G28AB | MX30LF4G26AB |
|---|---|---|---|---|---|
| Brand | Macronix | Macronix (same family, higher speed grade) | Macronix (same family, lower density) | Macronix (same family, 2 Gbit) | Macronix (3.3V variant) |
| Package | 63-VFBGA (9x11) | 63-VFBGA - same | 63-VFBGA - same | 63-VFBGA - same | 63-VFBGA - same |
| Supply Voltage | 1.7 V to 1.95 V | 1.7 V to 1.95 V (same) | 1.7 V to 1.95 V (same) | 1.7 V to 1.95 V (same) | 2.7 V to 3.6 V (different) |
| Access Time | 25 ns | Faster grade (lower ns) | 25 ns (same) | Faster grade | 25 ns (same) |
| Interface | Parallel (ONFI 1.0) | Parallel (ONFI 1.0) | Parallel (ONFI 1.0) | Parallel (ONFI 1.0) | Parallel (ONFI 1.0) |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C (same) | -40 C to +85 C (same) | -40 C to +85 C (same) | -40 C to +85 C (same) |
| Cell Technology | SLC | SLC (same) | SLC (same) | SLC (same) | SLC (same) |
Principaux différenciateurs
- 1.8V single-supply operation (vs MX30LF4G26AB)
- SLC endurance versus MLC alternatives (vs Generic 4 Gbit MLC parallel NAND)
- ONFI 1.0 compliance (vs Vendor-proprietary NAND)
Notes de conception
Decouple the Vcc balls of the 63-VFBGA package with 100 nF X7R ceramic capacitors placed within 3 mm of each Vcc ball, plus a single 10 uF bulk capacitor per supply rail. Because VFBGA balls are dense, use micro-via escape routing with 0.4 mm pitch and verify solder paste stencil aperture for ball-to-pad coplanarity to avoid head-in-pillow defects during reflow.
Match the 16-bit IO bus trace lengths within 50 mils (approximately 1.27 mm) and keep RE#, WE#, and CE# traces the same length to preserve setup and hold margins at the 25 ns access time. Place a 33 ohm series resistor near the host side of the bus if the trace length exceeds 50 mm to dampen reflections on the asynchronous interface.
Do not issue READ commands until Vcc has stabilized in the 1.7 V to 1.95 V window; many soft-locks come from undervoltage access. Always toggle CE# before pulling WE# low for each command cycle and use the R/B# pin (not arbitrary time delays) to detect operation completion - this avoids spurious ECC errors caused by reading the page buffer mid-program.
Allocate dedicated BCH or Hamming ECC hardware in the host controller; without ECC the bit-error rate of raw NAND will eventually corrupt user data. Implement block retirement based on ECC failure counters, and reserve at least 2 percent of total blocks for bad-block replacement so the file system can map out failing blocks invisibly.
Informations de conformité
RoHS compliant per Macronix product page. Industrial-grade -40 C to +85 C operating range, not AEC-Q100 qualified (separate automotive-qualified Macronix variants exist). Lead-free reflow profile per JEDEC J-STD-020.
