MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN: MT40A512M16JY-075E ✓ פעילMT40A512M16JY-075E סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower power consumption, and increased density compared to DDR3. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation. It is widely used in servers, desktops, laptops, and embedded systems where high bandwidth and capacity are required.
Key features of the MT40A512M16JY-075E include a refresh time of 8192 cycles, with 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. It supports auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, and CRC functions. The device is RoHS compliant and operates over a temperature range of 0°C to +95°C (TC). These features ensure reliable operation in demanding environments.
Technically, the MT40A512M16JY-075E utilizes Micron's advanced DRAM process technology, enabling high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports a parallel interface, simplifying integration with memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial systems where high memory bandwidth and capacity are critical. The 512M x 16 organization is ideal for systems requiring 16-bit data bus width, such as embedded processors and FPGAs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Follow the PCB layout guidelines in the Micron DDR4 datasheet to maintain signal integrity at high speeds.
חלופות תחליף ישיר עבור MT40A512M16JY-075E — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם MT40A512M16JY-075E (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, Operating Temperature, Refresh, Speed Grade.
MT40A512M16JY-075E IT:B
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A512M16JY-075E AIT:B
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A512M16LY-075E
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A512M16TB-062E:R
✅ Drop-In✓ במלאי
$60 / יחידה
הצג גיליון נתונים ←K4A8G165WB-BCTD
✅ Drop-In ⚠️ מפרטים לא מאומתים✗ אזל מהמלאי
$37 / יחידה
הצג גיליון נתונים ←H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ מפרטים לא מאומתים✗ אזל מהמלאי
$55.6818 / יחידה
הצג גיליון נתונים ←MT40A512M16JY-075E דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| גודל זיכרון | 8 Gbit |
| ארגון | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| קצב נתונים | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| ממשק | Parallel |
| מארז | 96-FBGA (8x14) |
| סוג הרכבה | Surface Mount |
| טווח טמפרטורת פעולה | 0°C to +95°C (TC) |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| סטטוס RoHS | Compliant |
| תכונות | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | 1.2V pseudo open-drain |
תצורת פינים של MT40A512M16JY-075E
| פין A1 | VDD — Power supply |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDDQ — I/O power supply |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VPP — Word line power supply |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VSS — Ground |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VDDQ — I/O power supply |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VSS — Ground |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
יישומים טיפוסיים
MT40A512M16JY-075E מתאים עבור 6 יישוםs: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Automotive Infotainment.
High-Performance Computing
The MT40A512M16JY-075E provides 8Gbit DDR4 memory with 1.33 GHz clock speed, ideal for HPC systems requiring high bandwidth and capacity. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in dense server configurations. The parallel interface simplifies integration with high-speed memory controllers, enabling efficient data processing in scientific simulations and data analytics.
מומלץ
Networking Equipment
In networking switches and routers, the MT40A512M16JY-075E offers high-speed data buffering with 2666 MT/s data rate, ensuring low latency packet processing. Its 8Gbit density supports large routing tables and packet buffers. The device's auto self-refresh and CRC features enhance reliability in continuous operation. The 96-FBGA package allows compact board designs, critical for high-port-count equipment.
מומלץ
Industrial Automation
The MT40A512M16JY-075E operates over 0°C to +95°C, suitable for industrial environments. Its 8Gbit capacity supports complex control algorithms and data logging. The device's write leveling and dynamic on-chip termination ensure signal integrity in noisy industrial settings. The 1.2V operation reduces heat generation, enhancing reliability in sealed enclosures.
מומלץ
Embedded Systems
For embedded applications like IoT gateways and edge computing, the MT40A512M16JY-075E provides a balance of performance and power efficiency. Its 8Gbit density supports multitasking and local data processing. The 96-FBGA package is compact, fitting space-constrained designs. The device's low voltage operation extends battery life in portable embedded systems.
מומלץ
Data Center Servers
The MT40A512M16JY-075E is designed for server memory modules, offering high density and speed for virtualization and cloud computing. Its 1.33 GHz clock and 8Gbit capacity enable fast data access and large memory pools. The device's auto precharge and data mask functions optimize memory bandwidth. The 1.2V supply reduces power consumption in large-scale data centers.
מומלץ
Automotive Infotainment
The MT40A512M16JY-075E AIT:B variant is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance. Its 8Gbit capacity supports complex graphics and real-time processing. The device's wide temperature range and reliability make it ideal for in-vehicle use. The 96-FBGA package withstands vibration and thermal cycling.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור MT40A512M16JY-075E — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | MT40A512M16JY-075E IT:B | MT40A512M16JY-075E AIT:B | MT40A512M16LY-075E | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
| Operating Temperature Range | 0°C to +95°C | -40°C to +95°C | -40°C to +125°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
מבדילים עיקריים
- High density 8Gbit in 512Mx16 organization (לעומתMT40A512M16LY-075E)
- Wide temperature range options (לעומתK4A8G165WB-BCTD)
- Proven Micron quality and reliability (לעומתH5AN8G6NDJR-XNC)
הערות תכנון
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes beneath the memory device to minimize noise. Follow Micron's DDR4 PCB design guidelines for trace length matching and termination.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a 4.7uF bulk capacitor for VPP. Ensure the power supply can handle transient currents during refresh and read/write operations.
The MT40A512M16JY-075E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values.
מידע על תאימות
RoHS compliance confirmed by JLCPCB listing. AEC-Q100 not applicable for standard grade; automotive variant AIT:B may be qualified.
