MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN: MT40A512M16JY-075E ✓ Hoạt độngMT40A512M16JY-075E Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower power consumption, and increased density compared to DDR3. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation. It is widely used in servers, desktops, laptops, and embedded systems where high bandwidth and capacity are required.
Key features of the MT40A512M16JY-075E include a refresh time of 8192 cycles, with 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. It supports auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, and CRC functions. The device is RoHS compliant and operates over a temperature range of 0°C to +95°C (TC). These features ensure reliable operation in demanding environments.
Technically, the MT40A512M16JY-075E utilizes Micron's advanced DRAM process technology, enabling high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports a parallel interface, simplifying integration with memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial systems where high memory bandwidth and capacity are critical. The 512M x 16 organization is ideal for systems requiring 16-bit data bus width, such as embedded processors and FPGAs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Follow the PCB layout guidelines in the Micron DDR4 datasheet to maintain signal integrity at high speeds.
Bộ thay thế dễ dàng lắp đặt cho MT40A512M16JY-075E — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT40A512M16JY-075E (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Operating Temperature, Refresh, Speed Grade.
MT40A512M16JY-075E IT:B
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A512M16JY-075E AIT:B
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A512M16LY-075E
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A512M16TB-062E:R
✅ Drop-In✓ Còn hàng
$60 / Đơn vị
Xem tài liệu →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$37 / Đơn vị
Xem tài liệu →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$55.6818 / Đơn vị
Xem tài liệu →MT40A512M16JY-075E Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Kích thước bộ nhớ | 8 Gbit |
| Tổ chức | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| Tốc độ dữ liệu | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| Giao diện | Parallel |
| Hộp | 96-FBGA (8x14) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | 0°C to +95°C (TC) |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Trạng thái RoHS | Compliant |
| Tính năng | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | 1.2V pseudo open-drain |
Cấu hình chân MT40A512M16JY-075E
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — I/O power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VPP — Word line power supply |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VSS — Ground |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VDDQ — I/O power supply |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VSS — Ground |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
Ứng dụng tiêu biểu
MT40A512M16JY-075E phù hợp cho 6 Áp dụngs: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Automotive Infotainment.
High-Performance Computing
The MT40A512M16JY-075E provides 8Gbit DDR4 memory with 1.33 GHz clock speed, ideal for HPC systems requiring high bandwidth and capacity. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in dense server configurations. The parallel interface simplifies integration with high-speed memory controllers, enabling efficient data processing in scientific simulations and data analytics.
Được đề xuất
Networking Equipment
In networking switches and routers, the MT40A512M16JY-075E offers high-speed data buffering with 2666 MT/s data rate, ensuring low latency packet processing. Its 8Gbit density supports large routing tables and packet buffers. The device's auto self-refresh and CRC features enhance reliability in continuous operation. The 96-FBGA package allows compact board designs, critical for high-port-count equipment.
Được đề xuất
Industrial Automation
The MT40A512M16JY-075E operates over 0°C to +95°C, suitable for industrial environments. Its 8Gbit capacity supports complex control algorithms and data logging. The device's write leveling and dynamic on-chip termination ensure signal integrity in noisy industrial settings. The 1.2V operation reduces heat generation, enhancing reliability in sealed enclosures.
Được đề xuất
Embedded Systems
For embedded applications like IoT gateways and edge computing, the MT40A512M16JY-075E provides a balance of performance and power efficiency. Its 8Gbit density supports multitasking and local data processing. The 96-FBGA package is compact, fitting space-constrained designs. The device's low voltage operation extends battery life in portable embedded systems.
Được đề xuất
Data Center Servers
The MT40A512M16JY-075E is designed for server memory modules, offering high density and speed for virtualization and cloud computing. Its 1.33 GHz clock and 8Gbit capacity enable fast data access and large memory pools. The device's auto precharge and data mask functions optimize memory bandwidth. The 1.2V supply reduces power consumption in large-scale data centers.
Được đề xuất
Automotive Infotainment
The MT40A512M16JY-075E AIT:B variant is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance. Its 8Gbit capacity supports complex graphics and real-time processing. The device's wide temperature range and reliability make it ideal for in-vehicle use. The 96-FBGA package withstands vibration and thermal cycling.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT40A512M16JY-075E — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT40A512M16JY-075E IT:B | MT40A512M16JY-075E AIT:B | MT40A512M16LY-075E | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
| Operating Temperature Range | 0°C to +95°C | -40°C to +95°C | -40°C to +125°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- High density 8Gbit in 512Mx16 organization (vsMT40A512M16LY-075E)
- Wide temperature range options (vsK4A8G165WB-BCTD)
- Proven Micron quality and reliability (vsH5AN8G6NDJR-XNC)
Ghi chú thiết kế
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes beneath the memory device to minimize noise. Follow Micron's DDR4 PCB design guidelines for trace length matching and termination.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a 4.7uF bulk capacitor for VPP. Ensure the power supply can handle transient currents during refresh and read/write operations.
The MT40A512M16JY-075E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values.
Thông tin tuân thủ
RoHS compliance confirmed by JLCPCB listing. AEC-Q100 not applicable for standard grade; automotive variant AIT:B may be qualified.
