MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
Référence : MT40A512M16JY-075E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $40.98 | $40,98 |
| 10 | $38.5 | $385,00 |
| 100 | $35.2 | $3 520,00 |
| 500 | $32.8 | $16 400,00 |
| 1 000 | $30.5 | $30 500,00 |
MT40A512M16JY-075E Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower power consumption, and increased density compared to DDR3. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation. It is widely used in servers, desktops, laptops, and embedded systems where high bandwidth and capacity are required.
Key features of the MT40A512M16JY-075E include a refresh time of 8192 cycles, with 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. It supports auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, and CRC functions. The device is RoHS compliant and operates over a temperature range of 0°C to +95°C (TC). These features ensure reliable operation in demanding environments.
Technically, the MT40A512M16JY-075E utilizes Micron's advanced DRAM process technology, enabling high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports a parallel interface, simplifying integration with memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial systems where high memory bandwidth and capacity are critical. The 512M x 16 organization is ideal for systems requiring 16-bit data bus width, such as embedded processors and FPGAs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Follow the PCB layout guidelines in the Micron DDR4 datasheet to maintain signal integrity at high speeds.
Alternatives de remplacement direct pour MT40A512M16JY-075E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A512M16JY-075E (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Refresh, Speed Grade.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A512M16JY-075E IT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M16JY-075E AIT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M16LY-075E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M16TB-062E:R
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$37 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →MT40A512M16JY-075E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gbit |
| Organisation de la mémoire | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| Débit de données | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| Interface | Parallel |
| Boîtier | 96-FBGA (8x14) |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | 0°C to +95°C (TC) |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Statut RoHS | Compliant |
| Caractéristiques | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | 1.2V pseudo open-drain |
Configuration des broches de MT40A512M16JY-075E
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VPP — Word line power supply |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VSS — Ground |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VDDQ — I/O power supply |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VSS — Ground |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
Applications typiques
MT40A512M16JY-075E convient pour 6 applications: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Automotive Infotainment.
High-Performance Computing
The MT40A512M16JY-075E provides 8Gbit DDR4 memory with 1.33 GHz clock speed, ideal for HPC systems requiring high bandwidth and capacity. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in dense server configurations. The parallel interface simplifies integration with high-speed memory controllers, enabling efficient data processing in scientific simulations and data analytics.
Recommandé
Networking Equipment
In networking switches and routers, the MT40A512M16JY-075E offers high-speed data buffering with 2666 MT/s data rate, ensuring low latency packet processing. Its 8Gbit density supports large routing tables and packet buffers. The device's auto self-refresh and CRC features enhance reliability in continuous operation. The 96-FBGA package allows compact board designs, critical for high-port-count equipment.
Recommandé
Industrial Automation
The MT40A512M16JY-075E operates over 0°C to +95°C, suitable for industrial environments. Its 8Gbit capacity supports complex control algorithms and data logging. The device's write leveling and dynamic on-chip termination ensure signal integrity in noisy industrial settings. The 1.2V operation reduces heat generation, enhancing reliability in sealed enclosures.
Recommandé
Embedded Systems
For embedded applications like IoT gateways and edge computing, the MT40A512M16JY-075E provides a balance of performance and power efficiency. Its 8Gbit density supports multitasking and local data processing. The 96-FBGA package is compact, fitting space-constrained designs. The device's low voltage operation extends battery life in portable embedded systems.
Recommandé
Data Center Servers
The MT40A512M16JY-075E is designed for server memory modules, offering high density and speed for virtualization and cloud computing. Its 1.33 GHz clock and 8Gbit capacity enable fast data access and large memory pools. The device's auto precharge and data mask functions optimize memory bandwidth. The 1.2V supply reduces power consumption in large-scale data centers.
Recommandé
Automotive Infotainment
The MT40A512M16JY-075E AIT:B variant is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance. Its 8Gbit capacity supports complex graphics and real-time processing. The device's wide temperature range and reliability make it ideal for in-vehicle use. The 96-FBGA package withstands vibration and thermal cycling.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A512M16JY-075E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A512M16JY-075E IT:B | MT40A512M16JY-075E AIT:B | MT40A512M16LY-075E | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
| Operating Temperature Range | 0°C to +95°C | -40°C to +95°C | -40°C to +125°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- High density 8Gbit in 512Mx16 organization (vs MT40A512M16LY-075E)
- Wide temperature range options (vs K4A8G165WB-BCTD)
- Proven Micron quality and reliability (vs H5AN8G6NDJR-XNC)
Notes de conception
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes beneath the memory device to minimize noise. Follow Micron's DDR4 PCB design guidelines for trace length matching and termination.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a 4.7uF bulk capacitor for VPP. Ensure the power supply can handle transient currents during refresh and read/write operations.
The MT40A512M16JY-075E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values.
Informations de conformité
RoHS compliance confirmed by JLCPCB listing. AEC-Q100 not applicable for standard grade; automotive variant AIT:B may be qualified.
