IGW40N120H3FKSA1 vs IGD08N120S7ATMA1 तुलना
विस्तृत दोनों ओर की तुलना IGW40N120H3FKSA1 द्वारा Infineon और IGD08N120S7ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IGW40N120H3FKSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | IGBTs | IGBTs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| माउंटिंग प्रकार | Through Hole | Surface Mount |
| पैकेज / केस | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| ऑपरेटिंग जंक्शन तापमान | — | -40C to +175C (industry grade) |
| पैकेज | — | PG-TO252-3 (DPAK) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |