IMZ120R045M1H vs IMW120R045M1H तुलना
विस्तृत दोनों ओर की तुलना IMZ120R045M1H द्वारा Infineon और IMW120R045M1H द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IMZ120R045M1H | IMW120R045M1H |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | CoolSiC™ 1200 V SiC Trench MOSFET | CoolSiC SiC Trench MOSFET |
| Drain-Source Voltage (VDS max) | 1200 V | — |
| On-Resistance RDS(on) at 25°C | 45 mΩ | — |
| Continuous Drain Current (ID at Tc=25°C) | 52 A | — |
| Total Power Dissipation at Tc=25°C | 228 W | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (typical) | — |
| Turn-off Gate Voltage | 0 V capable | — |
| ऑपरेटिंग जंक्शन तापमान | -55 °C to +175 °C | — |
| पैकेज | TO-247-4 (PG-TO247-4-1) | PG-TO247-3-41 (TO-247-3) |
| माउंटिंग प्रकार | Through-hole | Through Hole |
| Polarity | N-Channel | — |
| Driver Source Pin (Kelvin) | Yes - dedicated sense/source pin | — |
| Body Diode | Commutation-robust, synchronous-rectification ready | Robust, suitable for synchronous rectification |
| Qualification | JEDEC 47/20/22 (industrial) | Industrial grade |
| RoHS स्थिति | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| पावर डिसिपेशन (Ptot) | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Configuration | — | Single N-channel with built-in body diode |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |