IMZ120R045M1H vs IMW120R045M1H Perbandingan

Perbandingan bersamaan detil IMZ120R045M1H dari Infineon dan IMW120R045M1H dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IMZ120R045M1H IMW120R045M1H
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC SiC Trench MOSFET
Drain-Source Voltage (VDS max) 1200 V —
On-Resistance RDS(on) at 25°C 45 mΩ —
Continuous Drain Current (ID at Tc=25°C) 52 A —
Total Power Dissipation at Tc=25°C 228 W —
Gate Threshold Voltage VGS(th) 4.5 V (typical) —
Turn-off Gate Voltage 0 V capable —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket TO-247-4 (PG-TO247-4-1) PG-TO247-3-41 (TO-247-3)
Tipe Mounting Through-hole Through Hole
Polarity N-Channel —
Driver Source Pin (Kelvin) Yes - dedicated sense/source pin —
Body Diode Commutation-robust, synchronous-rectification ready Robust, suitable for synchronous rectification
Qualification JEDEC 47/20/22 (industrial) Industrial grade
Status RoHS Compliant —
Drain-Source Voltage (VDS) — 1200 V
On-Resistance (RDS(on)) — 45 mOhm at Tj = 25C
Continuous Drain Current (ID) — 52 A at Tc = 25C
Dissipasi Listrik (Ptot) — 228 W at Tc = 25C
Gate Threshold Voltage (VGS(th)) — 4.5 V
Recommended Turn-On Gate Voltage — 15 V
Turn-Off Gate Voltage — 0 V
Configuration — Single N-channel with built-in body diode
Gate Drive Compatibility — IGBT-compatible gate drive
dv/dt Control — Fully controllable via gate resistor
Turn-Off Switching Losses — Temperature independent
Manufacturer Recommended Operating Margin — Do not exceed 80% of maximum ratings for optimum lifetime

Spek dan Sumber

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