IMZ120R045M1H vs IMW120R045M1H Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IMZ120R045M1H disebabkan oleh Infineon dan IMW120R045M1H disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IMZ120R045M1H IMW120R045M1H
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC SiC Trench MOSFET
Drain-Source Voltage (VDS max) 1200 V —
On-Resistance RDS(on) at 25°C 45 mΩ —
Continuous Drain Current (ID at Tc=25°C) 52 A —
Total Power Dissipation at Tc=25°C 228 W —
Gate Threshold Voltage VGS(th) 4.5 V (typical) —
Turn-off Gate Voltage 0 V capable —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan TO-247-4 (PG-TO247-4-1) PG-TO247-3-41 (TO-247-3)
Jenis Pemasangan Through-hole Through Hole
Polarity N-Channel —
Driver Source Pin (Kelvin) Yes - dedicated sense/source pin —
Body Diode Commutation-robust, synchronous-rectification ready Robust, suitable for synchronous rectification
Qualification JEDEC 47/20/22 (industrial) Industrial grade
Status RoHS Compliant —
Drain-Source Voltage (VDS) — 1200 V
On-Resistance (RDS(on)) — 45 mOhm at Tj = 25C
Continuous Drain Current (ID) — 52 A at Tc = 25C
Pembuangan Kuasa (Ptot) — 228 W at Tc = 25C
Gate Threshold Voltage (VGS(th)) — 4.5 V
Recommended Turn-On Gate Voltage — 15 V
Turn-Off Gate Voltage — 0 V
Configuration — Single N-channel with built-in body diode
Gate Drive Compatibility — IGBT-compatible gate drive
dv/dt Control — Fully controllable via gate resistor
Turn-Off Switching Losses — Temperature independent
Manufacturer Recommended Operating Margin — Do not exceed 80% of maximum ratings for optimum lifetime

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