IPA60R180P7SXKSA1 vs IPW60R180P7XKSA1 तुलना
विस्तृत दोनों ओर की तुलना IPA60R180P7SXKSA1 द्वारा Infineon और IPW60R180P7XKSA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
IPW60R180P7XKSA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPA60R180P7SXKSA1 | IPW60R180P7XKSA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | CoolMOS P7 (Superjunction, 7th generation) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) | — |
| Power Dissipation (PD) at Tc | 26 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| पैकेज | PG-TO220-3-312 (Through-Hole, 3 leads) | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| ऑपरेटिंग तापमान रेंज | -55C to +150C (junction) | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| On-Resistance RDS(on) max | — | 180 mOhm |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (Pd, Tc=25C) | — | 72 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Drive Voltage (VGS, recommended) | — | 10 V (typical), +/-20 V max |
| ऑपरेटिंग जंक्शन तापमान | — | -55C to +150C |
| Body Diode | — | Fast body diode with low reverse recovery (Qrr) |
| Integrated Gate Resistor | — | Yes |
| Orderable Part Number | — | IPW60R180P7XKSA1 (tube pack, industrial grade) |