IPA60R180P7SXKSA1 vs IPW60R180P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPA60R180P7SXKSA1 disebabkan oleh Infineon dan IPW60R180P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPA60R180P7SXKSA1 IPW60R180P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET CoolMOS P7 (Superjunction, 7th generation)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at Tc 18 A —
Static Drain-Source On-Resistance (RDS(on)) 180 mOhm (max at 25C) —
Power Dissipation (PD) at Tc 26 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Kemasan PG-TO220-3-312 (Through-Hole, 3 leads) PG-TO247-3 (TO-247-3, through-hole, 3+tab pins)
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55C to +150C (junction) —
Channel Type N-Channel —
Configuration Single —
Status RoHS Compliant Compliant
Lead-Free Yes —
Polarity — N-Channel
Continuous Drain Current (ID, Tc=25C) — 18 A
On-Resistance RDS(on) max — 180 mOhm
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Power Dissipation (Pd, Tc=25C) — 72 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Drive Voltage (VGS, recommended) — 10 V (typical), +/-20 V max
Suhu Hubungan Operasi — -55C to +150C
Body Diode — Fast body diode with low reverse recovery (Qrr)
Integrated Gate Resistor — Yes
Orderable Part Number — IPW60R180P7XKSA1 (tube pack, industrial grade)

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