IRFR5305TRLPBF vs IRFR5410TRRPBF तुलना
विस्तृत दोनों ओर की तुलना IRFR5305TRLPBF द्वारा Infineon और IRFR5410TRRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFR5305TRLPBF | IRFR5410TRRPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | -13 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | 205 mΩ |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | -55C to +150C |
| पैकेज | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (5th Generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes (PBF suffix indicates lead-free) |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Polarity | — | P-Channel |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |