IRFR5305TRLPBF vs IRFR5410TRRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFR5305TRLPBF tarafından Infineon ve IRFR5410TRRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFR5305TRLPBF IRFR5410TRRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A -13 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ 205 mΩ
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
İşletim Jant Sıcaklığı -55C to +175C -55C to +150C
Paket TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Montaj Türü Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (5th Generation)
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes (PBF suffix indicates lead-free)
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
FET Type — MOSFET (Metal Oxide Semiconductor)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Total Gate Charge (Qg) — 70 nC
Power Dissipation (Pd) at Tc=25C — 66 W

Dökümanlar & Kaynaklar

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