IRFZ44NPBF vs FDP030N06 तुलना
विस्तृत दोनों ओर की तुलना IRFZ44NPBF द्वारा Infineon और FDP030N06 द्वारा onsemi. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFZ44NPBF | FDP030N06 |
|---|---|---|
| ब्रांड | Infineon | onsemi |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| पैकेज | TO-220AB (3-pin + tab) | TO-220-3 (3+Tab) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | PowerTrench (Trench) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS स्थिति | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Drain to Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ 25C | — | 120 A (Tc) |
| Continuous Drain Current (datasheet rating) | — | 193 A (Tc, datasheet title rating) |
| RDS(on) Max @ Id, Vgs | — | 3.2 mOhm |
| RDS(on) Typ | — | 2.6 mOhm |
| Power Dissipation (Tc) | — | 231 W (Tc) |
| Gate Drive Type | — | Standard level gate drive |
| Switching Speed | — | Fast |
| Gate Input Resistance | — | Low gate input resistance (low gate charge) |
| Avalanche Test | — | 100% avalanche tested |
| Packing | — | Tube |
| Typical Applications | — | Power supply, switching applications |