IRFZ44NPBF vs FDP030N06 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NPBF sa pamamagitan ng Infineon at FDP030N06 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NPBF FDP030N06
Brand Infineon onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-220AB (3-pin + tab) TO-220-3 (3+Tab)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (Advanced Process) PowerTrench (Trench)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Tindminan RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Drain to Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ 25C — 120 A (Tc)
Continuous Drain Current (datasheet rating) — 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs — 3.2 mOhm
RDS(on) Typ — 2.6 mOhm
Power Dissipation (Tc) — 231 W (Tc)
Gate Drive Type — Standard level gate drive
Switching Speed — Fast
Gate Input Resistance — Low gate input resistance (low gate charge)
Avalanche Test — 100% avalanche tested
Packing — Tube
Typical Applications — Power supply, switching applications

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