IRFZ44NPBF vs FDP030N06 比較
詳細並排比較 IRFZ44NPBF 由 Infineon 與 FDP030N06 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFZ44NPBF | FDP030N06 |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-220AB (3-pin + tab) | TO-220-3 (3+Tab) |
| 安裝類型 | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | PowerTrench (Trench) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Drain to Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ 25C | — | 120 A (Tc) |
| Continuous Drain Current (datasheet rating) | — | 193 A (Tc, datasheet title rating) |
| RDS(on) Max @ Id, Vgs | — | 3.2 mOhm |
| RDS(on) Typ | — | 2.6 mOhm |
| Power Dissipation (Tc) | — | 231 W (Tc) |
| Gate Drive Type | — | Standard level gate drive |
| Switching Speed | — | Fast |
| Gate Input Resistance | — | Low gate input resistance (low gate charge) |
| Avalanche Test | — | 100% avalanche tested |
| Packing | — | Tube |
| Typical Applications | — | Power supply, switching applications |