MPQ2222 vs MPQ2222A तुलना
विस्तृत दोनों ओर की तुलना MPQ2222 द्वारा Central Semiconductor और MPQ2222A द्वारा Central Semiconductor. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ सक्रियCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ सक्रियविशेषता तुलना
| पैरामीटर | MPQ2222 | MPQ2222A |
|---|---|---|
| ब्रांड | Central Semiconductor | Central Semiconductor |
| श्रेणी | Transistors | Transistors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| कलेक्टर-बेस वोल्टेज (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| एमिटर-बेस वोल्टेज (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| ट्रांज़िशन फ्रीक्वेंसी (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| पैकेज | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Marking | Full part number | — |
| RoHS स्थिति | Lead-free (PB Free suffix version available) | — |
| ट्रांज़िस्टर प्रकार | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| कलेक्टर-एमिटर वोल्टेज (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |