MPQ2222 vs MPQ2222A Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPQ2222 tarafından Central Semiconductor ve MPQ2222A tarafından Central SemiconductorAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktifCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ AktifÖzellik Karşılaştırması
| Parametre | MPQ2222 | MPQ2222A |
|---|---|---|
| Marka | Central Semiconductor | Central Semiconductor |
| Kategori | Transistors | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Toplayıcı-Basıt电压 (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Emisör-Basıt Voltage (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Geçiş Frekansı (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Paket | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Montaj Türü | Through Hole | Through Hole |
| Marking | Full part number | — |
| RoHS Durumu | Lead-free (PB Free suffix version available) | — |
| Transistor Türü | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Toplayıcı-Emisör Voltage (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |