MPQ2222 vs MPQ2222A Perbandingan
Perbandingan bersamaan detil MPQ2222 dari Central Semiconductor dan MPQ2222A dari Central Semiconductor. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktifCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MPQ2222 | MPQ2222A |
|---|---|---|
| Merek | Central Semiconductor | Central Semiconductor |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Tegangan Dasar Pemisah (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Tegangan Dasar Penjana (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Frekuensi Transisi (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Paket | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Marking | Full part number | — |
| Status RoHS | Lead-free (PB Free suffix version available) | — |
| Tipe Transistor | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Tegangan Pemisah-Penjana (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |