MPQ2222 vs MPQ2222A Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPQ2222 sa pamamagitan ng Central Semiconductor at MPQ2222A sa pamamagitan ng Central Semiconductor. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ NakahandaCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPQ2222 | MPQ2222A |
|---|---|---|
| Brand | Central Semiconductor | Central Semiconductor |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Voltage ng Collector-Base (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Voltage ng Emitter-Base (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Dalas ng Transisyon (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Packhaging | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Marking | Full part number | — |
| Tindminan RoHS | Lead-free (PB Free suffix version available) | — |
| Uri ng Transistor | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Voltage ng Collector-Emitter (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |