MPQ2222 vs MPQ2222A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPQ2222 disebabkan oleh Central Semiconductor dan MPQ2222A disebabkan oleh Central Semiconductor. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktifCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ AktifPengandingan Spesifikasi
| Parametr | MPQ2222 | MPQ2222A |
|---|---|---|
| Merek | Central Semiconductor | Central Semiconductor |
| Kategori | Transistors | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Tegangan Pengumpul-Bas (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Tegangan Pemancar-Bas (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Frekuensi Pertukaran (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Kemasan | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Marking | Full part number | — |
| Status RoHS | Lead-free (PB Free suffix version available) | — |
| Jenis Transistor | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Tegangan Pengumpul-Pemancar (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |