MPX2050D vs MPX2100D तुलना

विस्तृत दोनों ओर की तुलना MPX2050D द्वारा STMicroelectronics और MPX2100D द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

STMicroelectronics
MPX2050D MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics

MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics

MPX2050D ✓ सक्रिय
NXP Semiconductors
MPX2100D MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D - 100kPa Differential Pressure Sensor | NXP/STMicro

MPX2100D ✓ सक्रिय

विशेषता तुलना

पैरामीटर MPX2050D MPX2100D
ब्रांड STMicroelectronics NXP Semiconductors
श्रेणी Pressure Sensors Pressure Sensors
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Pressure Type Differential Differential
Operating Pressure Range 0 kPa to 50 kPa (0 PSI to 7.25 PSI) 0 kPa to 100 kPa (0 to 14.5 psi)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] —
आउटपुट प्रकार Analog voltage (Wheatstone bridge, differential) Analog ratiometric Wheatstone bridge (millivolts)
Output Voltage Span 0 mV to 40 mV (at 10 V excitation, 50 kPa) —
Sensitivity (typical) 0.45 mV/kPa (at 10 V excitation) —
Excitation Voltage 10 V DC (typical), [DATA_NEEDED: max Vex] —
Linearity ±0.5% (typical, full scale) 0.1% to 0.3% typical [DATA_NEEDED: confirm]
Accuracy ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) —
ऑपरेटिंग तापमान -40°C to +125°C —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Response Time 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) —
Bridge Resistance 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) —
पैकेज 4-SIP Module (Unibody, ported) 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch
Port Configuration Dual inlet (differential) —
माउंटिंग प्रकार Through-hole SIP Through-hole SIP module
RoHS स्थिति Compliant (per ST product page) Compliant [DATA_NEEDED: confirm from NXP product page]
MSL स्तर [DATA_NEEDED: MSL rating] —
Full-Scale Span (Typical) — 40 mV at 10 V excitation
Sensitivity (Nominal) — 0.4 mV/kPa
Supply Voltage (Recommended) — 10 V DC
Supply Voltage (Maximum) — 16 V DC
Pressure Port Configuration — Dual axial ports (differential)
Package Body Dimensions — 15.56 mm x 15.56 mm x 5.33 mm
ऑपरेटिंग तापमान रेंज — -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
On-Chip Temperature Compensation — Yes (factory laser-trimmed)
Technology — Silicon piezoresistive MEMS strain-gauge bridge
Diaphragm Material — Silicon [DATA_NEEDED: confirm]

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