MPX2050D vs MPX2100D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPX2050D disebabkan oleh STMicroelectronics dan MPX2100D disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ AktifPengandingan Spesifikasi
| Parametr | MPX2050D | MPX2100D |
|---|---|---|
| Merek | STMicroelectronics | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Jenis Output | Analog voltage (Wheatstone bridge, differential) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Voltage Span | 0 mV to 40 mV (at 10 V excitation, 50 kPa) | — |
| Sensitivity (typical) | 0.45 mV/kPa (at 10 V excitation) | — |
| Excitation Voltage | 10 V DC (typical), [DATA_NEEDED: max Vex] | — |
| Linearity | ±0.5% (typical, full scale) | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |
| Accuracy | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) | — |
| Suhu Operasi | -40°C to +125°C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Response Time | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) | — |
| Bridge Resistance | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) | — |
| Kemasan | 4-SIP Module (Unibody, ported) | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Port Configuration | Dual inlet (differential) | — |
| Jenis Pemasangan | Through-hole SIP | Through-hole SIP module |
| Status RoHS | Compliant (per ST product page) | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Gambaran Suhu Operasi | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |