MRF8HP21080HR5 vs MRF8S21100HR5 तुलना
विस्तृत दोनों ओर की तुलना MRF8HP21080HR5 द्वारा NXP Semiconductors और MRF8S21100HR5 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MRF8HP21080HR5 | MRF8S21100HR5 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel, Dual (2 elements) | N-Channel RF Power MOSFET |
| Configuration | Common Source, 2 Elements | — |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | 700 mA |
| Power Gain | 14.4 dB at 2.17 GHz | 18.3 dB at 2.17 GHz |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| पैकेज / केस | NI-780-4 (Case 465M) | — |
| माउंटिंग प्रकार | Flange Mount / Chassis Mount | Surface Mount / Flange Mount |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | LDMOS (HV8 generation) |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Test Voltage (Drain) | — | 28 V |
| Frequency of Operation | — | 2.17 GHz (max, typical 2110-2170 MHz) |
| Output Power (P1dB / pulsed) | — | 100 W |
| Output Power (typical application) | — | 24 W |
| पैकेज | — | NI-780H-2L (Case 465-06), 2-pin ceramic flange |
| RoHS स्थिति | — | RoHS Compliant |
| Operating Class | — | Class AB, Class C |
| Application | — | W-CDMA, LTE cellular base station |