MRF8HP21080HR5 vs MRF8S21100HR5 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8HP21080HR5 disebabkan oleh NXP Semiconductors dan MRF8S21100HR5 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF8HP21080HR5 | MRF8S21100HR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Jenis Transistor | LDMOS, N-Channel, Dual (2 elements) | N-Channel RF Power MOSFET |
| Configuration | Common Source, 2 Elements | — |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | 700 mA |
| Power Gain | 14.4 dB at 2.17 GHz | 18.3 dB at 2.17 GHz |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| Kemasan / Case | NI-780-4 (Case 465M) | — |
| Jenis Pemasangan | Flange Mount / Chassis Mount | Surface Mount / Flange Mount |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | LDMOS (HV8 generation) |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Test Voltage (Drain) | — | 28 V |
| Frequency of Operation | — | 2.17 GHz (max, typical 2110-2170 MHz) |
| Output Power (P1dB / pulsed) | — | 100 W |
| Output Power (typical application) | — | 24 W |
| Kemasan | — | NI-780H-2L (Case 465-06), 2-pin ceramic flange |
| Status RoHS | — | RoHS Compliant |
| Operating Class | — | Class AB, Class C |
| Application | — | W-CDMA, LTE cellular base station |