MRF8HP21080HR5 vs MRF8S21100HR5 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF8HP21080HR5 tarafından NXP Semiconductors ve MRF8S21100HR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF8HP21080HR5 | MRF8S21100HR5 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Obsolete | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Transistor Türü | LDMOS, N-Channel, Dual (2 elements) | N-Channel RF Power MOSFET |
| Configuration | Common Source, 2 Elements | — |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | 700 mA |
| Power Gain | 14.4 dB at 2.17 GHz | 18.3 dB at 2.17 GHz |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| Paket / Kas | NI-780-4 (Case 465M) | — |
| Montaj Türü | Flange Mount / Chassis Mount | Surface Mount / Flange Mount |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | LDMOS (HV8 generation) |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Test Voltage (Drain) | — | 28 V |
| Frequency of Operation | — | 2.17 GHz (max, typical 2110-2170 MHz) |
| Output Power (P1dB / pulsed) | — | 100 W |
| Output Power (typical application) | — | 24 W |
| Paket | — | NI-780H-2L (Case 465-06), 2-pin ceramic flange |
| RoHS Durumu | — | RoHS Compliant |
| Operating Class | — | Class AB, Class C |
| Application | — | W-CDMA, LTE cellular base station |