UCC21710QDWRQ1 vs UCC21550BDWR तुलना
विस्तृत दोनों ओर की तुलना UCC21710QDWRQ1 द्वारा Texas Instruments और UCC21550BDWR द्वारा Texas Instruments. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ सक्रियTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ सक्रियविशेषता तुलना
| पैरामीटर | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| ब्रांड | Texas Instruments | Texas Instruments |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| यूनिट मूल्य (USD) | $2.74 | — |
| फ़ंक्शन | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| पैकेज | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| ऑपरेटिंग तापमान रेंज | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| आउटपुट कॉन्फ़िगरेशन | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS स्थिति | — | [DATA_NEEDED: RoHS status] |