UCC21710QDWRQ1 vs UCC21550BDWR Perbandingan
Perbandingan bersamaan detil UCC21710QDWRQ1 dari Texas Instruments dan UCC21550BDWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ AktifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $2,74 | — |
| Fungsi | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| Paket | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| Rentang Suhu Kerja | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Konfigurasi Output | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |