UCC21710QDWRQ1 vs UCC21550BDWR 比較
詳細並排比較 UCC21710QDWRQ1 由 Texas Instruments 與 UCC21550BDWR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 啟用中規格比較
| 參數 | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $2.74 | — |
| 功能 | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| 封裝 | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| 工作溫度範圍 | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| 輸出配置 | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |