UCC21710QDWRQ1 vs UCC21550BDWR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng UCC21710QDWRQ1 sa pamamagitan ng Texas Instruments at UCC21550BDWR sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ NakahandaTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $2.74 | — |
| Fungsi | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| Packhaging | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| Hanay ng Temperature na Operasyon | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Output Kumpigurasyon | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |