1ED3124MC12HXUMA1 vs 1EDI60H12AHXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MC12HXUMA1 dari Infineon dan 1EDI60H12AHXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3124MC12HXUMA1 1EDI60H12AHXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
Jumlah Output 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) Galvanic isolation via coreless transformer
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
Waktu naik 15 ns —
Waktu Menurun 30 ns —
Suhu Kerja -40 C to +125 C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Paket PG-DSO-8 (DSO-8) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Tipe Mounting Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
Status RoHS Compliant Compliant
Product Type — Single-channel high-side gate driver IC
Isolation Voltage Rating — 1200 V
Number of Channels — 1
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
Konfigurasi Output — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Creepage Distance — 8 mm
Short-Circuit Protection — Short-circuit clamping
Level MSL — 2 (1 year floor life)

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